PhD. Adelmo of Solid State Electronics Laboratory, Simón Bolívar University, Caracas, Venezuela

"Origin and evolution of MOSFETs toward nanoelectronics"

presented by

PhD. Adelmo Ortiz-Conde

Solid State Electronics Laboratory, Simón Bolívar University, Caracas, Venezuela

Abstract:

We review the origins, evolution and present status of MOSFETs, which has been the dominant semiconductor device in electronics applications for more than 4 decades. The conceptual invention of MOSFET, by Lilienfeld in 1928, and the end of World War II, in 1945, inspired Bell Labs to research into semiconductors. Bardeen and Brattain, who were working in the Semiconductor Sub-Group at Bell Labs, fabricated the first point contact transistor in December,1947. This achievement motivated Shockley, who was the group leader, to invent the bipolar junction transistor in January 1948. Bardeen, Brattain and Shockley received the Nobel Prize in 1956 “for their discovery of the transistor effect.” After solving oxide reliability problems, the MOSFET was fabricated in 1960 by Kahng and Atalla. The invention of CMOS, by Wanlass and Sah in 1963, made the MOSFET to be the most commonly used device in digital applications. The transistors have been miniaturized for more than fifty years, following Moore’s Law from 1965, and they are now approaching their final limits in the nanometer regime. Recent innovations, such as strained silicon and high-k metal gates are being used in modern MOSFETs. New device designs as FinFETS, Nanowire and Nanosheet are now being fabricated.

Biography:

PhD. Adelmo Ortiz Conde

Adelmo Ortiz-Conde received the professional Electronics Engineer degree from Universidad Simón Bolívar (USB), Caracas, Venezuela, in 1979 and the M.E. and Ph.D. from the University of Florida, Gainesville, in 1982 and 1985, respectively. 

From 1979 to 1980, he served as an instructor in the Electronics Department at USB. In 1985, he joined the technical Staff of Bell Laboratories, Reading, PA, where he was engaged in the development of high voltage integrated circuits. In 1987, he returned to the Electronics Department at USB, where he was promoted to Full Professor in 1995.  He was on sabbatical leave at the University of Central Florida (UCF), Orlando, from January to August 1994, and again from July to December 1998. He also was on sabbatical leave at “Centro de Investigaciones y Estudios Avanzados” (CINVESTAV) National Polytechnic Institute (IPN), Mexico City, Mexico, from October 2000 to February 2001. 

He has coauthored one textbook, Analysis and Design of MOSFETs: Modeling, Simulation and Parameter Extraction (2012 Springer reprint of the original 1st ed. 1998, http://dx.doi.org/10.1007/978-1-4615-5415-8  ), over 200 international technical journal and conference articles (including 22 invited review articles). His present research interests include the modeling and parameter extraction of semiconductor devices.

Dr. Ortiz-Conde is an EDS Distinguished Lecturer and the Chair of IEEE’s CAS/ED Venezuelan Chapter. He was editor of IEEE Electron Device Letters in the area of Silicon Devices and Technology from 2009 to 2018. He was the Region 9 Editor of IEEE EDS Newsletter from 2000 to 2005. He is a Member of the Editorial Advisory Board of various technical journals: Microelectronics and Reliability, “Universidad Ciencia y Tecnología”, and “Revista Ingeniería UC”. He regularly serves as a reviewer for several international journals and conferences. He was one of the founders of the first IEEE International Caracas Conference on Devices, Circuits, and Systems (ICCDCS) in 1995.  In order to make it more international, this conference changed its name to “International Caribbean Conference on Devices, Circuits, and Systems (ICCDCS)” in its sixth edition in 2006. Since 2019, this conference has been sponsored by the IEEE Electron Devices Society (EDS) under the name of “IEEE Latin America Electron Devices Conference (LAEDC)”.

Email:

Address:Caracas, Venezuela