[Legacy Report] Modeling III-V Devices for Advanced Communication Systems

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This talk discusses specifics of modeling and efficient extraction procedure for large-signal (LS) models for GaAs, GaN microwave transistors used in advanced communication systems. We try to link the model parameters directly to experimental data, focus on critical issues to trace process variations and get good quality LS models. By optimizing measurement sequence, the extraction procedure is speeded up. Accurate models, suitable for CAD tools, working at high frequencies, can be obtained by combining direct extraction of basic parameters and fine tuning the optimization using the LS VNA waveforms. The GaN HEMTs modeling is difficult task (we push the device to the limits) so special attention is paid on the consistency of the DC, small-signal and LS waveforms. Examples of large-signal modeling of GaAs and GaN transistors will be reported.

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