[Legacy Report] GaN Devices Fabrication, Device modeling and Power Amplifier Design

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IEEE Electron Devices Society (EDS) Student Chapter, IIT Roorkee is Organizing a one day Work Shop on “GaN Devices Fabrication, Device Modeling and Power Amplifier Design”. The invited talks focusing on GaN devices fabrication, modeling and power amplifier design. The upcoming approach of RF power amplifier (PA) design requires embedding device model, where, access to the device intrinsic current source can provide designers new paradigm in PA design. This further requires approach towards device fabrication and modeling, and featured as theme of this workshop. The key attraction is live demonstration of active device characterization from Keysight technologies.


  Date and Time

  Location

  Hosts

  Registration


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  • Roorkee, Uttaranchal
  • India
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  • Co-sponsored by IEEE EDS SBC IIT ROORKEE

  Speakers

Dr. Patrick Roblin of Dept. Electrical & Computer Engineering, Ohio State University

Topic:

PA design with the embedding device model

Biography:

Address:ohio, Ohio, United States

Dr. Seema Vinayak of Solid State Physics Laboratory, Defense Research & Development Organization

Topic:

Potential Applications and GaN Technology status in Defence Scenario

Biography:

Address:punjab, Punjab, India