Transistor Evolution: From MOSFET to Tunnel-FET

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The Field Effect Transistor (FET) is the main device for the integrated circuits era. This presentation starts with an overview of the main progress steps of FET evolution and finish with a discussion of possible FET devices for future technologies. The starting point was the Lilienfeld patent filled in 1925 that was not fabricated due to the technological difficulties. Experimental Metal-Oxide-Semiconductor FET (MOSFET) was only obtained in 1960. The classical MOSFET was composed by Aluminum (Metal), silicon dioxide (Oxide) and Silicon (Semiconductor). In order to follow the Moore´s Law evolution and to avoid the short channel effects the classical MOSFET have to be upgraded using new materials and new device structures in order to improve the electrostatic control between gate and channel. The MOSFET has been upgraded with different gate electrode like polysilicon heavily doped, TiN and TaN. The gate oxide has also been replaced to high-k dielectrics like SiON, HfSiON and HfO2 in order to avoid gate leakage current. Finally, the well-known silicon channel has also been modified to strained silicon (uniaxial and biaxial), SiGe, Ge, InGaAs in order to boost the carriers mobility. The MOSFET structure has been improved from Bulk MOSFET to SOI (Silicon-on-Insulator) MOSFET and later from planar to vertical multiple-gate devices like FinFET, Triple Gate and Gate all around devices for enhancing the electrostatic coupling. New type of device conduction mechanism like Tunnel-FET devices (TFETs) have been studied to replace the conventional drift-diffusion conduction mechanisms due to the benefits obtained by tunneling conduction. The analog behavior of the TFET device will be presented. Nanowire devices and the first basics circuits with Tunnel-FET will be discussed and compared with FinFET ones.



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  • 161 Warren Street
  • Newark, New Jersey
  • United States 07102
  • Building: ECEC
  • Room Number: 202
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  • Dr. Ajay K. Poddar (IEEE MTT-S Region 1 Coordinator) Email:akpoddar@ieee.org

    Dr. Edip Niver (Vice Chair 1 IEEE North Jersey MTT/AP Chapter, email: edip.niver@njit.edu)

    MS. Anisha M. Apte (Vice Chair 2, IEEE North Jersey MTT/AP Chapter, email: anisha_apte@ieee.org)

  • Co-sponsored by Ajay Poddar
  • No Admission Charge
  • Starts 22 February 2018 11:40 AM
  • Ends 11 May 2018 04:32 PM
  • All times are America/New_York


  Speakers

Prof. Dr. Joao Antonio Martino

Prof. Dr. Joao Antonio Martino of University of Sao Paulo

Topic:

Transistor Evolution: From MOSFET to Tunnel-FET

The Field Effect Transistor (FET) is the main device for the integrated circuits era. This presentation starts with an overview of the main progress steps of FET evolution and finish with a discussion of possible FET devices for future technologies. The starting point was the Lilienfeld patent filled in 1925 that was not fabricated due to the technological difficulties. Experimental Metal-Oxide-Semiconductor FET (MOSFET) was only obtained in 1960. The classical MOSFET was composed by Aluminum (Metal), silicon dioxide (Oxide) and Silicon (Semiconductor). In order to follow the Moore´s Law evolution and to avoid the short channel effects the classical MOSFET have to be upgraded using new materials and new device structures in order to improve the electrostatic control between gate and channel. The MOSFET has been upgraded with different gate electrode like polysilicon heavily doped, TiN and TaN. The gate oxide has also been replaced to high-k dielectrics like SiON, HfSiON and HfO2 in order to avoid gate leakage current. Finally, the well-known silicon channel has also been modified to strained silicon (uniaxial and biaxial), SiGe, Ge, InGaAs in order to boost the carriers mobility. The MOSFET structure has been improved from Bulk MOSFET to SOI (Silicon-on-Insulator) MOSFET and later from planar to vertical multiple-gate devices like FinFET, Triple Gate and Gate all around devices for enhancing the electrostatic coupling. New type of device conduction mechanism like Tunnel-FET devices (TFETs) have been studied to replace the conventional drift-diffusion conduction mechanisms due to the benefits obtained by tunneling conduction. The analog behavior of the TFET device will be presented. Nanowire devices and the first basics circuits with Tunnel-FET will be discussed and compared with FinFET ones.

Biography:

Joao Antonio Martino was born in Sao Paulo, Brazil, preserving both nationalities: Brazilian and Italian. He starting on microelectronics field since 1982 on graduated program, when he received the Master (NMOS technology) and the Ph.D (CMOS technology) degrees in 1984 and 1988, respectively, in Electrical Engineering (microelectronics area) from University of Sao Paulo (USP), Brazil. He worked as a post-doctoral researcher in joint collaboration between Imec (Inter-University Microelectronic Center) / KU Leuven (University of Leuven), Belgium and University of Sao Paulo, from 1989 to 1994 in SOI technology and devices.

He is full Professor since 2005 and head of CMOS SOI group since 1990 at Electrical Engineering Department of University of Sao Paulo, Brazil. He was also the head of Electrical Engineering Department at University of Sao Paulo from 2009 to 2013.

He is author and co-author of more than 500 technical journal papers and conference proceedings and author/editor of 7 books. He concludes the advisor work of 49 students (18 Ph.D and 31 master students).

            He introduced the study of SOI devices characterization and technology in Brazil in 1990. His expertise is in the area of the electrical characterization, simulation and modeling of SOI devices at low/high temperatures, strain and radiation environment.

He is also interested in SOI-CMOS fabrication process and Multiple Gate devices. He was the head of the first 3D transistor (triple gate FinFET) fabricated in South America in 2012.

Recently he is working on Tunnel-FETs in collaboration between University of São Paulo and Imec/Belgium and UTBB SOI (Ultra-Thin Body and Buried oxide) and nanowire devices in collaboration with MINATEC, Grenoble.

            He is Senior Member of IEEE, Member of Electrochemical Society. He has been Chapter Chair of South Brazil Session of IEEE – Electron Device Society (EDS) since 2007 and Distinguished Lecturer of EDS/IEEE since 2008. He is also Vice-Chair of Region 9 Subcommittee for Regions/Chapters (SRC) EDS/IEEE since 2011.University of Sao Paulo

Email:

Address:University of Sao Paulo, , Sao Paulo, Sao Paulo, Brazil





Agenda

4:45 PM- Refreshments and Networking

5:00PM-6:30 PM: Talk by Prof. Dr. Joao Antonio Martino, Professor at University of Sao Paulo, Brazil

Seminar in ECE 202

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