Can GaN RF and Millimeter-Wave Technology Be Linear and Efficient?

#GaN #mm-wave #linearity #amplifier
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BUENAVENTURA ED/CAS CHAPTER

RF communications utilizes complex modulation schemes that require amplifier linearity. As amplifier operating frequency moves into the millimeter wave (mm-wave) range, the power added efficiency becomes also important to save the system prime power. As for 5G applications, high efficiency and linearity of amplifiers are required to support complex waveforms with high peak-to-average ratio (PAPR) and large instantaneous bandwidth. Recently, CMOS-based 28 GHz power amplifiers demonstrated 40% peak power-added efficiency (PAE) at 18.9 dBm saturated output power using 45 nm n-type CMOS SOI technology.

GaN HEMTs have a high breakdown voltage that offers high output impedance and power density per input capacitance over GaAs PHEMTs or CMOS. Thus, over the last decade, various GaN RF amplifiers are utilized for both commercial and defense applications. In this talk, we will present recent change in GaN RF and mm-wave technology for linearity and efficiency.


  Date and Time

  Location

  Hosts

  Registration


  • Date: 23 Jul 2019
  • Time: 06:30 PM to 08:00 PM
  • All times are (GMT-08:00) US/Pacific
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  • Skyworks Solutions, Inc.
  • 649 Lawrence Drive
  • Newbury Park, California
  • United States 91320
  • Building: 889
  • Click here for Map
  • Contact Event Host
  • Co-sponsored by Cristian Cismaru
  • Starts 01 July 2019 08:59 AM
  • Ends 23 July 2019 05:00 PM
  • All times are (GMT-08:00) US/Pacific
  • No Admission Charge

  Speakers

Dr. Jeong-Sun Moon Dr. Jeong-Sun Moon of HRL Laboratories, LLC

Biography:

Dr. Jeong-Sun Moon is a Fellow of IEEE and Senior Scientist at HRL Laboratories, Malibu, CA, currently serving as an Editor of a top-notch IEEE journal, Electron Device Letters. He has been with HRL since 2000 and has been a PI for numerous contracts from DARPA, ONR, NRO, JPL and NASA. He received 2014 George Abraham Outstanding Paper Award from Government Microcircuit Applications and Critical Technology Conference (GOMACTech), and NASA SPACE ACT Board Award in 2009. He received his Ph.D. in physics from Michigan State University, East Lansing, MI, in 1995 in the area of nano/quantum devices and digital signal processing (DSP). With nanoscale devices, he studied electron and spin quantum transport and its 1/f noise in nanoscale. Using DSP, he developed a complete software-defined programmable digital transceiver/spectrum analyzer in C/Assembly in 1992. Before HRL, he worked at Sandia National Laboratories, where he worked on III-V semiconductor nanoscale devices such as first 2D-2D resonant tunneling transistors. At HRL, his research focuses on emerging materials, novel high-speed devices, and applications toward RF circuits, using GaN, InP, GaSb, SiGe, Graphene, and phase-change material, as well as optical devices. He has published two book chapters and has authored or co-authored more than 100 papers and holds 20 patents. He also gave numerous invited conference and workshop presentations and tutorials/ short courses. His work was featured in various magazines including IEEE Spectrum, Compound Semiconductor, NASA Tech Briefs, Microwave Journal, and MIT Technology Review. He served on the Program Committee for the Device Research Conference. He is a member of Technical Program Committee in Microwave Theory and Techniques Society (MTT-S).

Address:HRL Laboratories, LLC, , California, United States




Agenda

6:30-7:00pm Gather and Pizza/Refreshments

 

7:00-8:00pm Presentation

 


Co-sponsored by Skyworks Solutions, Inc.