Moore’s Law and Radiation Effects on Microelectronics

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NPSS DISTINGUISHED LECTURE

Space and nuclear radiation have significant effects on Microelectronicss/Nanoelectroics operation and reliability. We are glad to have NPSS Distinguished Lecturer, Dr. Daniel Fleetwood of Vanderbilt University, join us to discuss radiation effects as technology progresses along the path of Moore's Law...


55 years ago Gordon Moore postulated that the number of components in an integrated circuit would double every 1-2 years. This trend still holds, making it one of the longest, sustained geometric progressions in the history of the industrialized world, enabling revolutions in computing and in virtually every aspect of technology that is enabled or enhanced by computing. Transistor dimensions have decreased from tens of microns to ~ 10 nanometers over this time period. In this presentation, we will examine the effects of Moore’s Law size and voltage scaling of transistors and integrated circuits on the vulnerability of microelectronics to ionizing radiation effects in near-Earth space and terrestrial applications. We will also discuss limitations that these vulnerabilities place on future highly-scaled integrated circuit technologies.



  Date and Time

  Location

  Hosts

  Registration



  • 7001 Little River Turnpike
  • Annandale, Virginia
  • United States 22003
  • Building: George Mason Regional Library
  • Room Number: George Mason Meeting Room
  • Click here for Map

Staticmap?size=250x200&sensor=false&zoom=14&markers=38.8317812%2c 77
  • nfhaddad@aol.com

  • Co-sponsored by CH02167 - Northern Virginia/Wash Jt Sections Chapter,NANO42
  • Starts 12 August 2019 12:01 PM
  • Ends 09 September 2019 12:00 PM
  • All times are America/New_York
  • No Admission Charge
  • Register


  Speakers

Prof. Daniel Fleetwood

Prof. Daniel Fleetwood of Vanderbilt University, Nashville Tennessee

Topic:

Moore’s Law and Radiation Effects on Microelectronics

55 years ago Gordon Moore postulated that the number of components in an integrated circuit would double every 1-2 years. This trend still holds, making it one of the longest, sustained geometric progressions in the history of the industrialized world, enabling revolutions in computing and in virtually every aspect of technology that is enabled or enhanced by computing. Transistor dimensions have decreased from tens of microns to ~ 10 nanometers over this time period. In this presentation, we will examine the effects of Moore’s Law size and voltage scaling of transistors and integrated circuits on the vulnerability of microelectronics to ionizing radiation effects in near-Earth space and terrestrial applications. We will also discuss limitations that these vulnerabilities place on future highly-scaled integrated circuit technologies.

Biography:

 

Dan Fleetwood received his Ph.D. from Purdue University in 1984. He joined Sandia National Laboratories in 1984 as a Member of the Technical Staff. In 1990, he was named a Distinguished Member of the Technical Staff. Dan accepted a position as Professor of Electrical Engineering at Vanderbilt University in 1999, and holds a secondary appointment as Professor of Physics. In 2001-2003 he served as Associate Dean for Research in the School of Engineering. In 2003 he was named Chairman of Vanderbilt’s Electrical Engineering and Computer Science Department, and in 2009 he was named Olin H. Landreth Chair in Engineering. Dan is author or co-author of more than 500 publications on radiation effects and low frequency noise, which have been cited more than 20,000 times (Google Scholar). He received the 2009 IEEE Nuclear and Plasma Sciences Merit Award, the society’s highest technical honor, and is a Fellow of IEEE and the American Physical Society.

Email:

Address:Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville, Tennessee, United States, 37235





Agenda

6:00-7:00 -Arrival, Food & Bevarage

7:00-8:00 -Technical Presentation

8:00-9:00 -Discussion as Needed