Dr. T.R. Lenka of National Institute of Technology, Silchar, India

GaN (Gallium Nitride) has become the material of choice of worldwide researchers due to its unique material properties hence extremely suitable for electronics and optoelectronics applications. The material properties include direct wide bandgap, low effective mass, high mobility, high saturation velocity, high breakdown voltage, high thermal conductivity, high polarization, high temperature sustainability, high radiation resistance, high power efficiency and high frequency of oscillation which makes it suitable for high power electronics and microwave/millimeter (mm) wave applications. As per suitability the bandgap is tuned from 3.4 eV (GaN) to 6.2 eV (AlN) as per chosen mole fraction ‘x’ in Al x Ga 1-x N. In AlGaN/GaN heterostructure device, a wide bandgap material (AlGaN) is grown over narrow bandgap (GaN) material resulting formation of 2DEG (two-dimensional electron gas) at the heterointerface due to discontinuity of conduction energy bandgap having electron density of 10 13 -10 14 cm -2 . The ultra-thin layer of 2DEG acts as channel in the heterostructure device with reduced scattering resulting the birth of high electron mobility transistor(HEMT). In AlGaN/GaN heterostructure, the polarization induced 2DEG makes the HEMT to operate in depletion mode (D-mode) inherently. However, high performance enhancement mode (E-mode) HEMT is always needed in power electronic applications for fail-safe operation and designing E-mode HEMT is a great challenge. The E-mode HEMT can be designed by suitable device fabrication techniques with novel gate-recessed structures. Hence, due to the unique material properties, AlGaN/GaN HEMT has wide applications in power electronics such as power amplifier (PA), low noise amplifier (LNA), Mixer and converter circuits (AC-DC, DC-DC) etc. Power electronics is the back bone of renewable energy conversions. Silicon based power devices such as DMOS and IGBT have already reached their performance limit. Hence, GaN is used here to further reduce energy loss during power conversions. GaN HEMTs have several other power electronics systems applications such as laptop power adapter, solar cell micro-inverter, power module for EV charging stations and data center server power module etc. Similarly, it has wide applications in microwave/mm-wave device applications in mobile base stations and satellite communications etc. Due to high radiation resistance GaN HEMT is also highly suitable in space applications.

Biography:

Dr. Lenka obtained Ph.D. (Engg.) in Microelectronics from Sambalpur University, India in 2012, M. Tech. in VLSI Design from Dr. A.P.J. Abdul Kalam Technical University, formerly Uttar Pradesh Technical University, Lucknow, India in 2007 and B.E. in Electronics & Communication Engineering from National Institute of Science & Technology, Berhampur University, India in 2000. Currently he is a Visiting Researcher at Helen and John C. Hartmann Department of Electrical and Computer Engineering, New Jersey Institute of Technology (NJIT), Newark, NJ, USA. He was a Visiting Professor/Researcher at Solar Energy Research Institute of Singapore (SERIS), National University of Singapore (NUS) from June-Sept 2018. He works as Assistant Professor in Electronics & Communication Engineering, National Institute of Technology Silchar, Assam, INDIA since 2012. Prior to this he was Associate Professor/Assistant Professor in ECE Dept., National Institute of Science & Technology, Berhampur, Odisha for 5 years and as Reader/Sr. Lecturer/Lecturer in ECE Dept., G.L.A. Institute of Technology & Management, now G.L.A. University, Mathura, UP for 6 years. Dr. Lenka is the Senior Member of IEEE (EDS, SSCS, CAS), Member IOP, UK, Member IEI. He has supervised 10 PhD thesis and 18 M.Tech thesis under his supervision. He has (co) authored 68 research papers in various SCI/Scopus indexed Journals, 7 book chapters and 38 research papers in IEEE International conferences. He is the recipient of Visvesvaraya Young Faculty Research Fellow award by Ministry of Electronics and Information Technology, Govt. of India in 2018. He is the recipient of ASEAN-India Collaborative R&D project grant from DST-SERB in 2019. He presented his work in Spain, Italy, Singapore, Bangkok, Macau, Hong Kong at International conferences and with collaborative research work.

Email:

Address:Silchar, Assam, India, 788010