IEEE-EDS Mexico Mini-Colloquium 2019
IEEE Electron Devices Society - Mexico Mini-Colloquium 2019
Mexico Chapter and CINVESTAV-IPN Student Branch Chapter
Center for Research and Advanced Studies of the National Polytechnic Institute
On the behalf of the IEEE-EDS Mexico Mini-Colloquium 2019 (MMQ-2019), organized jointly by the IEEE EDS Mexico Chapter, the IEEE EDS CINVESTAV-IPN Student Branch Chapter and the Section of Solid-State Electronics at the Center for Research and Advanced Studies of the National Polytechnic Institute, we extend the invitation for the conferences cycle with EDS Distinguished Lecturers and Invited Speakers presenting their most recent results about several issues in Materials for Electronics, Semiconductor Devices and Integrated Circuits Design.
The MMQ-2019 will be held in Mexico City, Mexico from November 20th to November 22nd, 2019.
Date and Time
Location
Hosts
Registration
- Start time: 20 Nov 2019 09:00 AM
- End time: 22 Nov 2019 03:00 PM
- All times are (UTC-06:00) Guadalajara
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- Av. Instituto Politécnico Nacional 2508, Col. San Pedro Zacatenco
- Alcaldía Gustavo A. Madero, CDMX
- Mexico City, Distrito Federal
- Mexico 07360
- Building: Computer Department
- Room Number: Electric Engineering Auditorium
- Click here for Map
- Contact Event Host
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Ing. José Martín Jiménez; mjimenez@cinvestav.mx; Tel. 57473800 Ext. 6256
Yesenia Cervantes Aguirre; ycervantes@cinvestav.mx; Tel. 57473800 Ext. 3774
- Co-sponsored by Center for Research and Advanced Studies of the National Polytechnique Institute, CINVESTAV-IPN.
- Starts 18 October 2019 09:00 AM
- Ends 22 November 2019 10:00 PM
- All times are (UTC-06:00) Guadalajara
- No Admission Charge
Speakers
Adelmo Ortiz-Conde of Universidad Simón Bolívar
Modeling and parameter extraction of diodes and solar cells.
We review and scrutinize several methods used for extraction of diode and solar cell model parameters. In order to facilitate the choice of the most appropriate method for the given particular application, the methods are classified according to their lumped parameter equivalent circuit model: single exponential, double-exponential, multiple-exponential, with and without series and parallel resistances. The best method for any particular application depends on the appropriateness of the equivalent circuit used to model the real device. For example, multi-exponential models are needed when single-exponential equation is insufficient to model all significant conduction mechanisms observed in many real devices. Multi-exponential models have also been successfully used to describe post-breakdown current-voltage characteristics in MOSFETs. In general, we recommend methods based on many data points, using for example numerical integration or optimization, as a means to reduce the extraction uncertainties arising from measurement noise.
Biography:
Adelmo Ortiz-Conde is currently a full Professor at Universidad Simón Bolívar (USB). He received the professional Electronics Engineer degree from Universidad Simón Bolívar (USB), Caracas, Venezuela, and the M.E. and Ph.D. from the University of Florida, Gainesville.
From 1979 to 1980, he served as an instructor in the Electronics Department at USB. In 1985, he joined the technical Staff of Bell Laboratories, Reading, PA, where he was engaged in the development of high voltage integrated circuits. Since 1987 he returned to the Electronics Department at USB where he was promoted to Full Professor in 1995. He was on sabbatical leave at Florida International University (FIU), Miami, from September to December 1993, and at University of Central Florida (UCF), Orlando, from January to August 1994, and again from July to December 1998. He also was on sabbatical leave at “Centro de Investigaciones y Estudios Avanzados” (CINVESTAV) National Polytechnic Institute (IPN), Mexico City, Mexico, from October 2000 to February 2001.
He has coauthored one textbook, Analysis and Design of MOSFETs: Modeling, Simulation and Parameter Extraction (2012 Springer reprint of the original 1st ed. 1998, http://dx.doi.org/10.1007/978-1-4615-5415-8 ), over 160 international technical journal and conference articles (including 15 invited review articles). His present research interests include the modeling and parameter extraction of semiconductor devices.
Dr. Ortiz-Conde is an EDS Distinguished Lecturer and the Chair of IEEE’s CAS/ED Venezuelan Chapter. He was editor of IEEE Electron Device Letters, from 2009 to 2018, in the area of Silicon Devices and Technology. He was the Region 9 Editor of IEEE EDS Newsletter from 2000 to 2005. He is a Member of the Editorial Advisory Board of various technical journals: Microelectronics and Reliability, “Universidad Ciencia y Tecnología” and “Revista Ingeniería UC”. He regularly serves as reviewer of several international journals and he was the General Chairperson of the first IEEE International Caribbean Conference on Devices, Circuits, and Systems (ICCDCS) in 1995, Technical Chairperson of the second, fourth and fifth editions of this conference in 1998, 2002 and 2004 respectively, and the Chairperson of the Steering Committee in 2000.
Email:
Address:Solid State Electronics Laboratory, Universidad Simón Bolívar, Caracas, Venezuela, 1080A
Edmundo A. Gutiérrez Domínguez of National Institute for Astrophysics, Optics and Electronics (INAOE)
Research on nano-semiconductor devices and its potential societal applications.
Fundamental research on physics of charge transport in semiconductor devices of different technologies (28 nm high-k, metal gate, and 14 nm FinFet’s) is introduced. The basic research is carried out with the purpose of understanding the physics behind reliability and electrical device degradation. However, some pieces of this fundamental research are also used for developing other applications beyond electronics, such as energy storage, water decontamination, bacteria detection, oil-industry sensors, and neurophysiology-monitoring systems, for instance. Under this approach, the INAOE advanced device electrical characterization laboratory, and the 0.8 μm CMOS fabrication pilot line, in conjunction with research done by different researchers and students, is launching a multidisciplinary project aimed at strengthening and extending the education and research on electron devices in Latin America.
Biography:
Edmundo Gutiérrez got his PhD in 1993 from Catholic University of Leuven (Belgium), while he was conducting research on low-temperature electronics at the Interuniversity MicroElectronics Center (IMEC) in Leuven, Belgium. He has been founder and Design Manager of the Motorola Mexico Center for Semiconductor Technology, and founder and Technical Director of the Intel Mexico System Research Center.
He has been Guest Professor at University of Sao Paulo (Brazil), Simon Fraser University (Vancouver, Canada), and Technical University Vienna (Austria). He has published more than 130 articles and conference proceedings on basic research of device charge transport physics, development of alternative device characterization techniques, and cryogenic electronics. He is co-author of the book “Low Temperature Electronics: Physics, Devices, Circuits, and Applications” (Academic Press, 2001), and Editor and co-author of “Nano-Scaled Semiconductor Devices: Physics, Modelling, Characterisation, and Societal Impact” (The IET Press, 2016).
Professor Gutiérrez is currently a Professor of the INAOE Electronics Department, IEEE-EDS Distinguished Lecturer, and Electron Device Letters Associate Editor.
On September 13, 2019, Prof. Gutiérrez was appointed General Director of the National Institute for Astrophysics, Optics, and Electronics (INAOE).
Email:
Address:National Institute for Astrophysics, Optics and Electronics (INAOE), Luis Enrique Erro No. 1, Tonantzintla, Puebla, Mexico, 72840
Agenda
Schedule Wednesday 20th—CINVESTAV-IPN CDMX, Mexico Speaker
9:30 - 9:45 Registration at CINVESTAV; Electrical Engineering Auditorium
9:45 - 10:00 Welcome/Opening Ceremony Dr. Gabriel López; Dr. Gerardo Silva; Dr. Ramón Peña
10:00 - 10:45 Propuesta de actualización de los cursos del área de sistemas VLSI Dr. José A. Moreno Cardenas
10:45 - 11:30 Fabricación de semiconductores nano-estructurados por irradiación Dr. Yuriy Koudriavtsev
iónica y su aplicación en optoelectrónica
11:30 - 12:30 Posters presentation and Coffebreak
12:30 - 13:15 Sobre la modelación de transistores avanzados Dr. Antonio Cerdeira Altuzarra
13:15 - 14:00 Verificación funcional para sistemas VLSI Dr. Jair García Lamont
Thursday 21st—CINVESTAV-IPN CDMX, Mexico
10:00 - 10:45 Sustentabilidad energética, experiencia laboral Dr. Fernando Hernández
10:45 - 11:30 Investigación sobre dispositivos nano-semiconductores y sus posi- Dr. Edmundo A. Gutiérrez
bles aplicaciones sociales
11:30 - 12:30 Posters presentation and Coffebreak
12:30 - 13:15 Modelado y extracción de parámetros de diodos y celdas solares Dr. Adelmo Ortiz Conde
13:15 - 14:00 Roundtable: La electrónica del estado sólido y sus aplicaciones: ac- Dr. A. Cerdeira; Dr. J. Moreno; Dr. Y. Koudriavtsev
tualidad y tendencias Dr. E. Gutiérrez; Dr. A. Ortiz; Dr. M. Alemán
Friday 22nd—CINVESTAV-IPN CDMX, Mexico
10:00 - 10:45 Perspectivas de la investigación de celdas solares en México Dr. Arturo Morales Acevedo
10:45 - 11:30 Evolución de un sistema fotovoltaico solar y tecnologías de celdas Dr. Yasuhiro Matsumoto
solares basadas en silicio
11:30 - 12:30 Posters presentation and Coffebreak
12:30 - 13:15 Sobre trabajos de actualidad en AOS-TFTs y celdas solares híbridas Dra. Magali Estrada
en la SEES
13:15 - 14:00 Roundtable - Celdas solares: actualidad y tendencias Dr. A. Morales; Dr. Y. Matsumoto; Dra. M. Estrada
14:00 - 14:10 Closing Ceremony
MMQ-2019 is an IEEE-EDS sponsored technichal meeting. Co-sponsored by the Section of Solid-Sate Electronics at the Center for Research and Advanced Studies of the National Polytechnic Institute.
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