Dr. Fernando Guarín of Distinguished Member of Technical Staff at Global Foundries,East Fishkill, NY

As the dimensions shrink, one of the major challenges in device technology is controlling various parameters to obtain high reliability. Device reliability is the resultant of various analyses of the design, process and product and understanding innumerable phenomenon to control the extension of even atomic level defects, especially when the dimensions are at nanometer level. Understanding the physical phenomenon with which devices mal-function becomes more striving in solving both the device and process problems. Difficulties arise in the area of fault localization, physical failure analysis as well as identifying the physical phenomenon and solving the related problems. One of the most important and challenging area is interfaces and comprehending the related issues. Studies on interfaces of basic transistor structure have shown un-assumable problems through physical analysis which provide insights into the device reliability. Physical analysis studies on device gate structures involving ultra-thin gate dielectrics and related interfaces are discussed. These studies provide deep insight into the device physics in terms of electron conduction through interfaces which in turn reveals certain challenges in the technology progression. An overview of such studies to understand the conduction mechanisms, microstructural damages, interface interactions as well as the physical effects in the structural integrity in will be discussed in this talk.

Biography:

Dr. Fernando Guarín is a Distinguished Member of Technical Staff at Global Foundries in East Fishkill NY. He earned his BSEE from the “Pontificia Universidad Javeriana”, in Bogotá, Colombia, the M.S.E.E. degree from the University of Arizona, and the Ph.D. in Electrical Engineering from Columbia University, NY He has been actively working in microelectronic reliability for over 37 years. From 1980 until 1988 he worked in the Military and Aerospace Operations division of National Semiconductor Corporation. In 1988 he joined IBM’s microelectronics division where he worked in the reliability physics and modeling of Advanced Bipolar, CMOS and Silicon Germanium BiCMOS technologies. He retired from IBM’s Semiconductor Research Development Center after 27 years as Senior Member of Technical Staff and joined GlobalFoundries in 2016. Dr. Guarín is an IEEE Fellow, Distinguished Lecturer for the IEEE Electron Devices Society, where he has served in many capacities including; member of the IEEE’s EDS Board of governors, chair of the EDS Education Committee, Secretary for EDS. He is the IEEE EDS President 2018-2019

Email:

Address:Global Foundries, East Fishkill , NY, New York, United States