Mini-Colloquium (MQ) on Nanotechnology and Nanoelectronics

#Gas #Sensor #2D #Material #Terahertz #devices #Neuromorphic #IC #Technology #Mixed-Signal #Intelligence
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IEEE EDS sponored Mini-Colloquium (MQ) on Nanotechnology and Nanoelectronics will be held on Wednesday, December 4, 2019.



  Date and Time

  Location

  Hosts

  Registration



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  • 154 Summit Street, Newark, NJ 07102
  • Newark, New Jersey
  • United States 07102
  • Building: ECEC
  • Room Number: 202
  • Click here for Map

  • Contact Event Host
  • Ajay K. Poddar, Ph.: 201-560-3806, email:akpoddar@ieee.org

    Durga Misra, +1-973-596-5739, email: dmisra@ieee.org

    Edip Niver, email: edip.niver@njit.edu

    Anisha Apte, email: anisha_apte@ieee.org

  • Co-sponsored by AP/MTT17, ED/CAS
  • Starts 01 November 2019 02:00 PM UTC
  • Ends 04 December 2019 05:00 AM UTC
  • No Admission Charge


  Speakers

Prof. Leonid Tsybeskov Prof. Leonid Tsybeskov of NJIT, NEWRAK, NJ, USA

Topic:

Introduction: Mini-Colloquium (MQ) on Nanotechnology and Nanoelectronics

Biography:

Dr. Tsybeskov’s research is focused on group IV (Si, SiGe, Ge, SiCGe, etc.) semiconductor nanostructures and nano-devices. He has introduced nanocrystalline Si/amorthous SiO2 superlattices and has been credited for the first observation of self-organization, phonon dispersion folding and resonant carrier tunneling in these nanostructures. Recently, his group has reported the first observation of controlled hetero-interface abruptness in Si/SiGe nano-hetero-interfaces and demonstrated the shortest reported radiative carrier lifetime and high-efficiency light-emission in the 1300-1600 nm wavelength region. He collaborates with the internationally recognized research institutions in United States (Intel Corporate Research, Hewlett-Packard Research Laboratories, Corning, LANL, UVA), Canada (NRC), Germany (TUM and MPI Halle), France (IEMN), Japan (UofT) and Russia (MSLU). He is an author and co-author of more than 150 publications (including two Nature papers), four US patents, several books and book chapters, and a dozen review articles.

 

Address:ECE Dept. Chair, NJIT, , NEWARK, New Jersey, United States





Agenda

08:45 AM - Refreshments and Networking

09:00 AM - 09:05 AM: Welcome by Prof. Leonid Tsybeskov, ECE Dept. Chaoir, NJIT, Newark, USA

09:15 AM - 9:45 AM: EDS and Future by Dr. Fernando Guarin, President, IEEE Electron Device Society, Globalfoundries, USA

09:45 AM - 10:30 AM: Interface Physics, Reliability and Analysis Challenges in Si Nanodevices by Dr. MK Radhakrishnan, EDS VP, CR,NANOREL, Singapore

10:30 AM - 10:45 AM Coffee Break

10:45 AM - 11:30 AM: High Performance Gas Sensors using 2D Nanomaterials by Prof. Navakanta Bhat, IISc, Bangalore, India

11:30 AM - 12:15 PM: Nanoplasmonic TeraFETs for Terahertz Applications by Prof. Michael Shur, RPI, USA

12:15 PM - 01:30 PM: Lunch 

01:30 PM - 02:15 PM: Power Management Solutions Enabled by Mixed-Signal Technologies and Intelligence by Dr. Bin Zhao, Iotelligent Semiconductor, USA

02:15 PM - 3:30PM: Emerging Trend in 5G, IoT and SDR by Prof. Dr. Ulrich Rohde, President, Synergy Microwave Corp., NJ, USA

03:30 PM - 3:45 PM: Coffee Break

03:45 PM - 04:30 PM: Designing Learning Systems based on Nanoscale Devices by Prof. Bipin Rajendran, ECE Dept, NJIT, USA

04:30 PM - 04:35 PM: Vote of Thanks & Adjournment 

You do not have to be an IEEE Member to attend. Refreshmen is free for all attendess. Please invite your friends and colleagues to take advantages of this Invited series of Distinguished Lectures. You need to register.



Co-sponsor by MTT/AP & ED/CAS Chapters