Eric Bonelli of Wolfspeed, Cree Company

This webinar will discuss the design process for creating a power amplifier using Wolfspeed GaN HEMT RF models in AWR. The focus of the presentation will be on the CGHV27030S, which is a 50V surface mount transistor housed in a DFN package. The target application is an avionics driver for Mode-S signal. The design specifications include 1030 – 1090 MHz target bandwidth, 18dB power of gain, 30 W of output power, and 65% drain efficiency. A primary consideration during the design was the thermal constraint due to the package under the high pulse chain of Mode-S. Design considerations, such as optimizing for efficiency and monitoring the dissipated power under temperature, made it possible to achieve a successful design. The design process will cover load pull, creating matching networks, focusing on specific performance goals, measuring junction temperature, and generating an accurate EM simulation. Finally a measured to model comparison will be shown to show the accuracy of the Wolfspeed GaN HEMT model.

Biography:

Eric Bonelli received his B.A.Sc (2017) from the New Jersey Institute of Technology, in electrical engineering with a focus in RF and Microwaves, and his Graduate Certificate in LTE and RF Communications (2020) from North Carolina State University. After graduating undergrad, he joined Wolfspeed, a Cree Company. He is currently working in the role of RF Applications engineer focused on supporting the aerospace and defense product line which includes both GaN-on-SiC and LDMOS technology.

Address:Wolfspeed, Cree Company, United States