The Evolution of Low Noise Devices and Amplifiers

#CMOS,LNA #PHEMT #FET,SiGe #GaAs #InP #MHEMT
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The low noise amplifier (LNA) is a critical element in modern receivers boosting small signals without adding significant noise. This presentation will trace the development of devices and amplifier types providing performance data. The device technology changed significantly over time starting with the vacuum tube, then varactor diode parametric amplifiers, and evolving to the three terminal solid state transistor. Technological transistor innovations lowered the LNA's noise figure and raised the frequency of operation. Devices described include the bipolar transistor, CMOS transistor, field effect transistor (FET), high electron mobility transistor (HEMP), pseudomorphic high electron transistor (PHEMT), and metamorphic high electron mobility transistor (MHEMT). Details of LNA semiconductors including Silicon, SiGe, GaAs, and InP will be presented as well as the amplifier types: standard three terminal, feedback, cascode, and travelling wave. LNA noise figure measurement techniques will be shown as well as the LNA design procedures with a step-by-step design example.





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  • Room No: ECEC-202
  • 161 Warren Street
  • Newark, New Jersey
  • United States 07102
  • Building: ECE Building
  • Click here for Map

  • Contact Event Host
  • Dr. Ajay Kumar Poddar(201)-560-3806, (Email: akpoddar@synergymwave.com) Prof. Edip Niver (973)596-3542, (Email: niver@njit.edu)
  • Co-sponsored by Dr.-Ing. Ajay Poddar, Prof. Edip Niver
  • Starts 01 January 2013 01:00 AM UTC
  • Ends 06 February 2013 03:00 PM UTC
  • No Admission Charge


  Speakers

Dr. Edward Niehenke Dr. Edward Niehenke of Niehenke Consulting

Topic:

The Evolution of Low Noise Devices and Amplifiers

Biography: Edward C. Niehenke was born in Abington, PA, in 1937. He received his BS (1961), MS (1965), and PhD (1997) degrees in electrical engineering from Drexel University, Philadelphia, PA.

From 1961 to 1963 he was with Martin Marietta where he developed microwave transitions for superconducting delay lines and investigated behavior of semiconductor devices at 770K. From 1963 to 1997 he was with Westinghouse/Northrop Grumman in Baltimore, MD, where he was responsible for the development of state of the art RF/microwave/millimeter wave circuits, miniature integrated assemblies, and subsystems. He retired from Northrop Grumman in 1997 as a senior advisory engineer and is now a consultant and lectures on nonlinear circuits and transceiver design.

Niehenke has pioneered the development of innovative RF/microwave/millimeter wave circuits including: super low-noise amplifiers, PIN and Schottky barrier limiters, efficient linear power amplifiers, voltage tunable high Q VCO resonators, electrostatic switch and phase shifters, high power bipolar amplifier with internal matching and subharmonic suppression, silicon carbide wideband frequency multipliers, active PHEMT multiplies, receiver protectors with multi-level STC attenuator, low-noise microstrip voltage controlled and dielectric resonator stabilized oscillators, subharmonic image rejection and image enhanced mixers, planar millimeter wave two axis monopulse transceiver with switchable polarization, and low-phase noise millimeter wave fiber optical links . He recently led the development of state-of-the-art 94 GHz solid-state transmitter and transceiver miniature modules reducing the cost of millimeter wave systems and making them practical. Niehenke's innovations can be found in over 15 operational production systems.

Niehenke holds nine patents, three Westinghouse Trade Secret Awards, one Westinghouse Value Engineering Merit Award, and one George Westinghouse Innovation Award. He has given over 120 presentations at symposia, workshops, IEEE chapter/section meetings, and keynote addresses at conferences. He has authored over 30 papers on RF/microwave/millimeter wave circuits. He was on the faculty of the Johns Hopkins University, teaching electricity and magnetism for three years. As the IEEE Microwave Theory and Techniques Society 1986/87 Distinguished Microwave Lecturer, he gave his lecture “Gallium Arsenide–Key to Modern Microwave Technology” to 70 groups throughout the world. Since 1983 he has been actively teaching linear, nonlinear, and transceiver circuit design for wireless communications to over 3000 professionals throughout the world.

Niehenke is a member of the Microwave and Millimeter Wave Integrated Circuits, Microwave Systems, and Wireless Communications MTT-S Technical Committees. He was the advisor (2010), technical program chairman (1998) and chairman (1986) of the International Microwave Symposia held in Baltimore. He serves as a member of the MTT-S Technical Program Committee since 1983 and is the MTT-S Ombudsman. Niehenke was a member of MTT-S ADCOM for 9 years, was a recipient of the IEEE Centennial and Millennium Medals, is a fellow of the IEEE, and is a registered professional engineer in the State of Maryland.
Email: e.niehenke@ieee.org
Phone: +1 410 796 5866

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Address:Baltimore, Maryland, United States





Agenda

Event Agenda: Dr. Edward Niehenke will be presenting the talk on "The Evolution of Low Noise Devices and Amplifiers"

5:00PM: Networking

5:30PM: Buffet Dinner

6:00PM: Talk

Free dinner will be served at 6:00PM. All are welcome. You don't have to be IEEE member to attend the talk.