On the use of soft gamma radiation to characterize the pre-breakdown carrier multiplication in SiC power MOSFETs and its correlation to the terrestrial cosmic ray failure rate as measured by neutron irradiation

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In this presenation, some issues are solved that are encountered if using the high-energy gamma radiation for the noninvasive

characterization of carrier multiplication in commercial, packaged SiC power devices under prebreakdown

conditions. For this scope the soft gamma emission of Am241 (59.9 keV) is exploited, which provides

higher signal generation and a more efficient collimation of the sensing beam than in the Co60 and Cs137

radioactive gamma sources used in a previous work. Carrier multiplication factors are measured in two different

SiC power MOSFETs under different bias conditions and compared to the values obtained from the high-energy

sources. Literature failure rate data for single event burnout (terrestrial cosmic radiation) as measured by neutron

irradiation are correlated to the multiplication factors as measured by the Am241 source. Finally, preliminary

directions are issued to use of the multiplication factor as an indicator to define the bias derating factor for the

devices under operation conditions.



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  • Date: 09 Nov 2020
  • Time: 05:00 PM to 06:30 PM
  • All times are Europe/Zurich
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ZOOM meeting

  • ETH Zurich
  • Zurich
  • Switzerland
  • Building: ONLINE



  Speakers

Mauro Ciappa of ETH Zurich

Topic:

On the use of soft gamma radiation to characterize the pre-breakdown carrier multiplication in SiC power MOSFETs and its

In this presentation, some issues are solved that are encountered if using the high-energy gamma radiation for the noninvasive

characterization of carrier multiplication in commercial, packaged SiC power devices under prebreakdown

conditions. For this scope the soft gamma emission of Am241 (59.9 keV) is exploited, which provides

higher signal generation and a more efficient collimation of the sensing beam than in the Co60 and Cs137

radioactive gamma sources used in a previous work. Carrier multiplication factors are measured in two different

SiC power MOSFETs under different bias conditions and compared to the values obtained from the high-energy

sources. Literature failure rate data for single event burnout (terrestrial cosmic radiation) as measured by neutron

irradiation are correlated to the multiplication factors as measured by the Am241 source. Finally, preliminary

directions are issued to use of the multiplication factor as an indicator to define the bias derating factor for the

devices under operation conditions.

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Address:ETH Zurich, ETH Zentrum, Zurich, Switzerland, 8092