On the use of soft gamma radiation to characterize the pre-breakdown carrier multiplication in SiC power MOSFETs and its correlation to the terrestrial cosmic ray failure rate as measured by neutron irradiation
In this presenation, some issues are solved that are encountered if using the high-energy gamma radiation for the noninvasive
characterization of carrier multiplication in commercial, packaged SiC power devices under prebreakdown
conditions. For this scope the soft gamma emission of Am241 (59.9 keV) is exploited, which provides
higher signal generation and a more efficient collimation of the sensing beam than in the Co60 and Cs137
radioactive gamma sources used in a previous work. Carrier multiplication factors are measured in two different
SiC power MOSFETs under different bias conditions and compared to the values obtained from the high-energy
sources. Literature failure rate data for single event burnout (terrestrial cosmic radiation) as measured by neutron
irradiation are correlated to the multiplication factors as measured by the Am241 source. Finally, preliminary
directions are issued to use of the multiplication factor as an indicator to define the bias derating factor for the
devices under operation conditions.
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- Date: 09 Nov 2020
- Time: 05:00 PM to 06:30 PM
- All times are (UTC+01:00) Bern
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Speakers
Mauro Ciappa of ETH Zurich
On the use of soft gamma radiation to characterize the pre-breakdown carrier multiplication in SiC power MOSFETs and its
In this presentation, some issues are solved that are encountered if using the high-energy gamma radiation for the noninvasive
characterization of carrier multiplication in commercial, packaged SiC power devices under prebreakdown
conditions. For this scope the soft gamma emission of Am241 (59.9 keV) is exploited, which provides
higher signal generation and a more efficient collimation of the sensing beam than in the Co60 and Cs137
radioactive gamma sources used in a previous work. Carrier multiplication factors are measured in two different
SiC power MOSFETs under different bias conditions and compared to the values obtained from the high-energy
sources. Literature failure rate data for single event burnout (terrestrial cosmic radiation) as measured by neutron
irradiation are correlated to the multiplication factors as measured by the Am241 source. Finally, preliminary
directions are issued to use of the multiplication factor as an indicator to define the bias derating factor for the
devices under operation conditions.
Email:
Address:ETH Zurich, ETH Zentrum, Zurich, Switzerland, 8092