EDS Distinguished Lecture - Differentiated Fully Depleted SOI (FDSOI) technology for highly efficient and integrated mmwave 5G connectivity solution

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The Circuits & Devices Chapter of IEEE Toronto is pleased to invite you to join us for a virtual talk by Distinguished Lecturer Dr. Anirban Bandyopadhyay of Globalfoundries Inc.

Please see below for the schedule and details of the talk.

 

 



  Date and Time

  Location

  Hosts

  Registration



This event will be a virtual talk held on Zoom.

Invitations will be emailed to registered guests before the event. 

  • Toronto, Ontario
  • Canada
  • Starts 26 February 2021 11:59 PM
  • Ends 19 March 2021 04:30 PM
  • All times are Canada/Eastern
  • No Admission Charge
  • Register


  Speakers

Dr. Anirban Bandyopadhyay of GLOBALFOUNDRIES INC.

Topic:

Differentiated Fully Depleted SOI (FDSOI) Technology for Highly Efficient and Integrated mmwave 5G Connectivity Solution

The emergence of enhanced mobile broadband (eMBB) connectivity based on mmwave 5G generated huge interest in the entire telecommunication ecosystem. While mmwave allows huge bandwidth of channels to enable enhanced broadband, it also poses a lot of technical challenges in terms of coverage, generating enough transmitted power efficiently particularly in the uplink, system cost & scaling and long term reliability of the hardware system particularly for  infrastructure including Satellite born systems. Current talk will focus on how Silicon technologies based on differentiated fully depleted SOI (FDSOI) can address the above challenges by enabling a highly efficient and integrated radio without compromising on the mmwave performance and reliability. Talk will highlight the technology Figures of Merits (FOMs) for a mmwave phased array system and how a differentiated FDSOI technology platform compares with other silicon technologies in terms of devices and circuits.

Biography:

Dr. Anirban Bandyopadhyayis the Senior Directorof Strategic Applications within the Mobility & Wireless Infrastructure Business Unit of GLOBALFOUNDRIES, USA. His work is currently focused on hardware architecture & technology evaluations for emerging RF and mmwave applications. Prior to joining GLOBALFOUNDRIES, he was with IBM Microelectronics, New York and with Intel, California where he worked on different areas like RF Design Enablement, Silicon Photonics, signal integrity in RF & Mixed signal SOC’s. Dr. Bandyopadhyay did his PhD in Electrical Engineering from Tata Institute of Fundamental Research, India and Post-Doctoral research at Nortel, Canada and at Oregon State University, USA. He represents Global Foundries in different industry consortia and alliances on RF/mmwaveapplications and is a Distinguished Lecturer of IEEE Electron Devices Society.

Address:Santa Clara, California, United States