InN Quantum Dots by MOCVD for Infrared Applications
The III-N system has proved successful for light-emitters in the high-energy visible and ultraviolet but has faced challenges in the lower-energy regime. The most common growth technique for nitrides devices, metalorganic vapor phase epitaxy, has been used here to grow InN quantum dots capable of emitting in the near-infrared. Both In-polar and N-polar quantum dots have been grown and characterized, showing differences in morphology and emission by atomic force microscopy and photoluminescence.
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- Santa Barbara, California
- United States
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Caroline Reilly of DenBaars Group in the Materials Dept. UCSB
InN Quantum Dots by MOCVD for Infrared Applications
The III-N system has proved successful for light-emitters in the high-energy visible and ultraviolet but has faced challenges in the lower-energy regime. The most common growth technique for nitrides devices, metalorganic vapor phase epitaxy, has been used here to grow InN quantum dots capable of emitting in the near-infrared. Both In-polar and N-polar quantum dots have been grown and characterized, showing differences in morphology and emission by atomic force microscopy and photoluminescence.
Image from https://doi.org/10.1002/pssb.201900508
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