Dr. Hiroshi Iwai

Abstract:
Recent smart society has been conducted by the progress of semiconductor technologies, especially by that of CMOS miniaturization, and demand for further high-performance CMOS development is increasing. However, the gate length of MOSFETs is approaching its limit of 10 nm caused by the leakage current increase, and no more significant performance increase is expected at the level of a single MOSFET. Still the demand of the society is strong, and thus, the industry is squeezing the performance by increasing the MOSFET density per unit area by decreasing interconnect pitch with EUV and stacking the MOSFETs to vertical directions such as nano-sheets. These efforts are expected to continue for another 10 years depending on the cost and market requirements. In addition, new technology development for semiconductor memory, communication, and power devices are being conducted very aggressively. In any case, the importance of semiconductor device will increase significantly in next 30 years.

In this talk, the recent development of CMOS towards its limit is explained and the future electronic device engineering combined with bio technology for the latter half of 21st century is discussed.

Biography:

Short bio:
Prof. Hiroshi Iwai is a Vice Dean and a Distinguished Chair Professor of International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan, and a Professor Emeritus, Tokyo Institute of Technology, Yokohama, Japan He is a semiconductor device engineer who received BE and Ph.D degrees from Univ. of Tokyo. He worked at Toshiba for 26 years from 1973 and at Tokyo Institute of Technology for 22 years from 1999. He engaged in the development of high-density memories and logic/RF/photovoltaic/power devices.

Especially, he has contributed to the miniaturization of MOSLSI devices. Also, he has been concentrated to the development of Si IGBT and GaN power device technologies for these 10 years. He is a Life Fellow of IEEE, an awarded life member and a Fellow of ECS, and a Fellow of JSAP, ICICE and IEEJ. He served as an IEEE EDS President and a Division I Director, and contributed to education as an IEEE EDS Distinguished lecturer for 25 years since 1994. He was appointed to the first IEEE EDS Eminent lecturer in 2020.

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