PES-Jt. Chapter-IEEE Hyderabad Section / FREE Webinar-2/ on "EMI/EMC FOR EV'S- OVERVIEW" / on 20-March-2021/ Saturday/ From 6.30 PM to 8.00 PM (IST)
FREE Live Webinar on "EMI/EMC FOR EV'S- OVERVIEW " / on 20-March-2021/ Saturday/ From 6.30 PM to 8.00 PM (IST)
Additional General Manager, BHEL Corporate R & D, Hyderabad
***************************
***************************
With the recent advances in technology, in particular electrical Vehicles, automobiles contain more Power electronic components and sensitive micro-processor/micro-controller controller-based systems for proper operation and reliability. All these systems characterised by high power switching and low power components are placed into a confined space. This architecture causes an electromagnetic interference or cross talk between these systems. If these are not addressed in the design properly it may affect systems to malfunction or even may fail to operate.
In the present talk on EMI/EMC, following are addressed:
- What is EMI/EMC
- Why EMI/EMC is required?
- Importance of EMI/EMC in Hybrid and Electric Vehicles.
- EM Compliance.
- EMI/EMC testing.
- EMI/EMC Limits and Standards.
- Design for EMI/EMC Compliance.
***********
Brief Profile of the Invited Speaker:
**********************
Dr. N.V.P.R. Durga Prasad garu
- Retired from BHEL Corp. R&D, India after serving for about 35 years in various capacities.
- Head Advanced Intelligent Machine Control Systems: Design and Development of many electrical and electronic projects for various applications right from project initiation stages through critical design reviews to delivery.
- Conceived and developed number of products and systems for Power Plants, Process Industries and Defence.
- Architected and developed a Distributed Controller System (DCS) for power plants based on real time embedded systems and VxWorks RTOS.
- An on-line generic Asset Management System software, encompassing Condition/Periodic/Time based Maintenance was developed for electrical power generation and distribution.
- Designed and Developed mil-grade compliant variable frequency and variable voltage (VFVV) drive controllers for large capacity Permanent Magnet based Motors for Defence Applications.
- Established an Integrated Regenerative Test Bed facility for testing large capacity (up to 500 kW) Permanent Magnet Machines for the Defence Applications.
- Head Knowledge Base Engineering: Conceived and lead the projects in the Design automation of product design and manufacturing through Knowledge Based Engineering (KBE).
- Expert Consultant: Expert Guidance to Defence projects (Navy) for EMI/EMC compliance.
- Chairman Engineering Software Committee: Committee for scrutinizing and approving proposals for new software procurement.
- Holds number of patents and copywrites.
***************
*************************
Registration Closes on : 20-March-2021/ Saturday/ at 7 PM
*****************
Webinar Registration Link for PARTICIPATION as Attendees:
https://ieeemeetings.webex.com
Date and Time
Location
Hosts
Registration
-
Add Event to Calendar
- Kurnool
- Kurnool, Andhra Pradesh
- India 518002
- Contact Event Host
-
For any Assistance :
1) For IEEE Members: Dr.G.Siva Kumar/ Email: g.sivakumar.in@ieee.org/ Phone: 8332969295
2) For Non-IEEE Particpants: Dr./ Email: Dr. C. Harinatha Reddy/ Phone: 9966124224
3) For ALL Students: Prof.B.Madhuri/ Email: bayya.madhuri@ieee.org/ Phone: 9010020113
***************************
- Co-sponsored by Dr. Y. Vijayalatha / Chair, Educational Society Chapter, Hyderabad Section, India
Speakers
Dr. Tanya Kirilova Gachovska of Senior Verification Engineer, Solantro Semiconductor Corp. Ottawa, Canada
Different Types of GAN Devices used in Industry and their Potential Applications
Significant research into GaN as materials for semiconductor devices has been carried out during the last 20 years. GaN material has wide band gap energy which enables the devices to operate at elevated temperatures (600°C) while retaining low leakage current. The higher breakdown strength for a given blocking voltage of GaN results in small channel lengths as a result, the input and output capacitance and, therefore, the associated switching losses at a given switching frequency, are reduced. This leads to an increase of the switching frequency to 0.5-1 MHz with acceptable switching losses, which significantly reduces the size and cost of the passive components in power electronic systems.
While Si and SiC power MOSFETs are normally-OFF enhancement mode vertical devices, GaN HEMTs are lateral and they can be fabricated to be normally-OFF enhancement mode devices or normally-ON depletion mode devices. A normally-ON device is not preferred for high power applications. Designers overcome this problem by creating enhancement mode devices or by integrating a depletion mode HEMT with a low voltage Si MOSFET, and create cascode or direct drive devices. In this special session, the current status and future prospects of GaN Power HEMTs will be presented. Physics and figure of merits (FoMs) of different power GaN devices that can be found on the market will be presented. Devices from GaN systems (enhancement mode), Transphorm (cascade), VisiC and Texas Instrument (direct drive), Panasonic (GiT), ST (MasterGaN®), and Navitas Semiconductor (AllGaN™) will be compared. Potential applications of GAN devices will be presented.
Email:
Address:Ottawa, Canada
Agenda
Agenda:
* Welcome Address by Dr.C. Harinatha Redy, Chair, PES/IAS/PELS--Jt.Chapter
* Introduction of the Speaker by Dr. G. Siva Kumar
* Lecture by the Invited Speaker: Dr. N.V.P.R. Durga Prasad
* Lecture Topic: "EMI/EMC FOR EV'S- OVERVIEW "
* Q & A Session.
* Brief Presentation on IEEE-Membership Benefits
* Closing Remarks
* Vote of Thanks: by Sri. Vijaya Rama Raju/ Execom Member, PES/IAS/PELS--Jt.
******************************************
A Technology Sharing Initiative by PES/IAS/ PELS Jt.Chapter (OU ID: PE31/IA34/PEL35) in association with GRIET, Hyderabad, Telangana