Insights into transceiver design for 5G mm-wave equipped cell-phones
The explosive growth services delivered via the internet onto the mobile handset has result in an insatiable demand for higher data-rates. Millimeter-wave CMOS radios – a research topic for over a decade – is now finally on the cusp of large-scale deployment. In this talk I will describe the challenges and state-of-the-art in circuits and architectures for 28GHz/38GHz 5G NR transceivers targeting user-equipment or UE applications.
Date and Time
Location
Hosts
Registration
- Date: 05 May 2021
- Time: 02:00 PM to 03:00 PM
- All times are (GMT-07:00) Canada/Mountain
-
Add Event to Calendar
- Starts 15 March 2021 11:46 AM
- Ends 05 May 2021 02:00 PM
- All times are (GMT-07:00) Canada/Mountain
- No Admission Charge
Speakers
Venumadhav (Venu) Bhagavatula of Samsung
Biography:
Venumadhav Bhagavatula received the B.E. degree in electronics and communication from the University of Delhi, New Delhi, India, the M.Tech. degree in electronic design technology from the Indian Institute of Science, Bangalore, India, and the Ph.D. degree in electrical engineering from the University of Washington, Seattle, WA, USA, in 2005, 2007, and 2013. Since 2014 he has been with the Advanced Circuit Design group at Samsung Semiconductors Inc., San Jose, CA, USA. His research interests include RF/mm-wave and low-power mixed signal circuits. He currently serves as a technical program committee member for the ISSCC.