Insights into transceiver design for 5G mm-wave equipped cell-phones

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The explosive growth services delivered via the internet onto the mobile handset has result in an insatiable demand for higher data-rates. Millimeter-wave CMOS radios – a research topic for over a decade – is now finally on the cusp of large-scale deployment. In this talk I will describe the challenges and state-of-the-art in circuits and architectures for 28GHz/38GHz 5G NR transceivers targeting user-equipment or UE applications.



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  • Date: 05 May 2021
  • Time: 02:00 PM to 03:00 PM
  • All times are Canada/Mountain
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Zoom information will be sent to registered attendees on May 4th.

  • Starts 15 March 2021 11:46 AM
  • Ends 05 May 2021 02:00 PM
  • All times are Canada/Mountain
  • No Admission Charge


  Speakers

Venumadhav (Venu) Bhagavatula of Samsung

Biography:

Venumadhav Bhagavatula received the B.E. degree in electronics and communication from the University of Delhi, New Delhi, India, the M.Tech. degree in electronic design technology from the Indian Institute of Science, Bangalore, India, and the Ph.D. degree in electrical engineering from the University of Washington, Seattle, WA, USA, in 2005, 2007, and 2013. Since 2014 he has been with the Advanced Circuit Design group at Samsung Semiconductors Inc., San Jose, CA, USA. His research interests include RF/mm-wave and low-power mixed signal circuits. He currently serves as a technical program committee member for the ISSCC.