IEEE EDS DL Talk by Prof. Ajit Kumar Panda on "Semiconductor Devices for 5G Communication Technology"
IEEE EDS DL Talk by Prof. Ajit Kumar Panda
The continuous growth of wireless communication, the data traffic was projected to increase in the year 2020 by 1000-fold and further exploded the data traffic exponentially by the year 2030. Increasing spectral efficiency throughput using Long Term Evolution (LTE) system and acquiring additional frequency spectrum could not able to solve the problem and hence need new disruptive thinking like replacement of Si CMOS technology to GaN HEMT technology to use in 5G Communication Technology, particularly at 28GHz. Utilizing the use of new frequency band in milli-meter wave frequencies are expected to solve such kind of problem. This must have to done from hardware design first and hence the talk will cover the aspect of Design and implement of an integrated transceiver (LNA, PA and Switch/Circulator/Diode in a single IC) using GaN HEMT technology suitable for millimeter-wave 5G applications. For this, a case study of a part of IC design will be presented in this talk.
Date and Time
Location
Hosts
Registration
-
Add Event to Calendar
- Dept of Electronics and Communication Engineering
- National Institute of Technology Silchar
- Silchar, Assam
- India 788010
- Building: ECE/CSE Building
- Room Number: EC-23
- Contact Event Hosts
- Co-sponsored by Dr. T. R. Lenka
- Starts 15 May 2021 05:54 PM UTC
- Ends 22 May 2021 11:30 AM UTC
- No Admission Charge
Speakers
Prof. Ajit Kumar Panda
Semiconductor Devices for 5G Communication Technology
The continuous growth of wireless communication, the data traffic was projected to increase in the year 2020 by 1000-fold and further exploded the data traffic exponentially by the year 2030. Increasing spectral efficiency throughput using Long Term Evolution (LTE) system and acquiring additional frequency spectrum could not able to solve the problem and hence need new disruptive thinking like replacement of Si CMOS technology to GaN HEMT technology to use in 5G Communication Technology, particularly at 28GHz. Utilizing the use of new frequency band in millimeter-wave frequencies is expected to solve such kind of problem. This must have to done from hardware design first and hence the talk will cover the aspect of Design and implementation of an integrated transceiver (LNA, PA and Switch/Circulator/Diode in a single IC) using GaN HEMT technology suitable for millimeter-wave 5G applications. For this, a case study of a part of IC design will be presented in this talk.
Biography:
Dr. Ajit Kumar Panda is a senior member of IEEE and a Distinguished Lecturer of IEEE Electron Device Society. He works on Semiconductor Devices (Focusing on HEMT/MOS HEMT) and Circuits (Focusing on Sensors Interface Circuit Design for use in IoT and glitch minimization).
Email:
Address:Bhubaneswar, Orissa, India
Agenda
IEEE EDS DL Talk By Prof. Ajit Kumar Panda
22 May 2021 at 3 PM
IEEE EDS DL Talk by Prof. Ajit Kumar Panda