IEEE SWISS SSC Distinguished Lecture (WEBINAR) / Automatic extraction of MOSFET parameters
We hope all of you are doing well and healthy, and had or have going to have a nice summer break.
Your Swiss Solid State Circuit Society chapter is please to host Prof. Carlos Galup-Montoro.
The video conferencing link will be provided on the day to registred attendees.
The topic of the lecture is : " Automatic extraction of MOSFET parameters "
Please Join at 16:00 PM [CET] mute your headset or microphone.
We make a group picture in the begining for society report.
For the Q&A make sure to have your headset or a proper microphone.
The Agenda is as follow:
16:00 - 16:05 Welcome participants Teleconference set-up
16:05 - 17:00 Lecture
17:00 - 17:30 Questions / Discussion
We look forward meeting you and having fruitful discussion.
For your IEEE Switzerland Solid State Circuit Society committee.
Date and Time
- Date: 28 Sep 2021
- Time: 04:00 PM to 05:30 PM
- All times are Europe/Zurich
- Add Event to Calendar
- Starts 10 September 2021 06:00 PM
- Ends 28 September 2021 06:00 PM
- All times are Europe/Zurich
- No Admission Charge
Carlos Galup-Montoro of Electrical Engineering Department, Federal University of Santa Catarina, Florianópolis, Brazil
Automatic extraction of MOSFET parameters
Essential to the design of CMOS circuits is an understanding of the transistor model and the meaning of its main parameters. Only three fundamental parameters are needed for the long channel transistor: the threshold voltage VT0, the specific current IS and the slope factor n. The long channel parameters can be directly extracted from the transconductance-to-current ratio (gm/ID) in the linear region.
With the addition of the drain induced barrier lowering (DIBL) effect, the resulting four parameter model, is adequate for low voltage and acceptable for many standard supply voltage designs. The DIBL parameter can, in its turn, be directly extracted from the intrinsic gain of the common source amplifier.
Finally, we will review ultra-low-power circuits, operating near the threshold condition, that allow the automatic extraction of the specific current IS and the threshold voltage VT0 of MOS transistors.
Carlos Galup-Montoro, studied engineering sciences at the University of the Republic, Montevideo, Uruguay, and electronic engineering at the National Polytechnic School of Grenoble (INPG), France. He received the degree in electronics and the Ph.D. degree from INPG, in 1979 and 1982, respectively. From 1982 to 1989, he worked at the University of São Paulo, Brazil. Since 1990, he has been with the Electrical Engineering Department, Federal University of Santa Catarina, Florianópolis, Brazil, where he is currently a professor. In the second semester of the academic year 1997-1998, he was a Research Associate with the Analog Mixed Signal Group, Texas A&M University. He was a Visiting Scholar with UC Berkeley from 2008 to 2009 and with IMEP/INPG in the first trimester of 2017.