Ultra-wide bandgap semiconductors: Materials, devices and AI innovations
Fundamental understanding and Innovations in materials, devices and computational physical sciences are key to the progress in semiconductor technologies. The talk will, in simple terms, present the key material, nanoscale and device innovations in III-nitride and other ultrawide bandgap semiconductors for laser devices, solid state lighting, power electronics, and integration technologies. Key barries and potential solutions for microdisplay devices, deep ultraviolet lasers, and power electronics will be presented. An Artificial Intelligence approach in designing photonics and nanoscale structrues will be displaced.
Date and Time
Location
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Registration
- Date: 03 Nov 2021
- Time: 02:00 PM to 03:00 PM
- All times are (UTC+10:30) Adelaide
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- Co-sponsored by IET Retired Engineers Group
Speakers
Prof Nelson Tansu of University of Adelaide
Biography:
Head of School, Electrical and Eelctronic Engineering, University of Adelaide