Distinguished Lecture Program
The IEEE EDS Nepal Chapter organized a virtual/online Distinguished Lecture program in Kathmandu on 23th March, 2022 by EDS DL Dr. Hieu P. T. Nguyen, Ph.D. Associate Professor, Department of Electrical and Computer Engineering, New Jersey, Institute of Technology, University Heights, Newark, New Jersey. The title of his presentation was “III-Nitride Nanowire Light-Emitting Diodes: Materials, Device Fabrication, and Applications”. The program was started at 6:40 PM. Before the delivery of his talk, Associate Prof. Dr. Gopy Chandra Kafle read the short resume of Dr. Nguyen. The EDS overview slides was also presented.
At the end of the program, past president, Prof. Bhadra Pokharel gave a vote of thank and the program was chaired by Nepal Chapter Chair Prof. Rajendra Parajuli. The MC of the program was Dr. Gopi Chandra Kafle, Secretary of Nepal Chapter.
Total participant in the program were 25, among them 13 were IEEE members and 12 were students and faculty. Large number of questions were asked to Associate Prof. Nguyen. He answered all questions satisfying the queries of the participants so that the program ended only at 8:00PM.
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- Kathmandu, Nepal, Nepal
- Nepal
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Nguyen of Department of Electrical and Computer Engineering, New Jersey, Institute of Technology, University Heights, Newark, New Jersey
“III-Nitride Nanowire Light-Emitting Diodes: Materials, Device Fabrication, and Applications”.
According to Dr. Nguyen, III-nitride nanowire hetero-structures have been intensively studied as an emerging platform for future solid-state lighting, full-color displays, and medical applications. Compared to the conventional GaN based planar light-emitting diodes (LEDs), due to the effective lateral stress relaxation, III-nitride nanowires offer several distinct advantages including greatly reduced dislocation densities and polarization fields. Moreover, the use of nanowire structure provides an effective approach to scale down the dimensions of future devices and systems. However, the development of high-performance nanowire based optoelectronic devices remains several challenges, due to the lack of carrier confinement in the device active region, electron leakage and surface non-radiative recombination. In this talk, I will present the molecular beam epitaxial (MBE) growth, fabrication, and characterization of III-nitride nanowire LEDs on Si and patterned substrates. Multiple color emission across nearly the entire visible wavelength range. A high color rendering index of >95 was recorded for white-light emitted from such phosphor-free core-shell nanowire LEDs. Moreover, we have demonstrated ultraviolet LEDs using nano-wire structures grown by MBE. Future prospects of these nanowire devices will also be discussed.
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