Mini Colloquium:Can the sub-6nm node meet 6G?


On EDS Beijing Chapter Letterhead

In commemoration of the 75th Anniversary of the Invention of the Transistor, the IEEE Electron Devices Beijing Chapter will hold a mini colloquium (MQ) entitled, “Can the sub-6nm node meet 6G?” The MQ will be a half-day hybrid event co-located between the CAD-TFT 2022 ( and IFETC 2022 ( conferences, and will take place in the afternoon of Aug 20, 2022 at Haiqing Hotel, Qingdao, China. 

The MQ will host a broad range of topics to represent the multi-disciplinary nature of the emerging GHz devices and circuits and millimeter-wave (mmWave) applications. In particular, we see how the silicon integrated circuit (IC) is continuing to have an unprecedented impact on every aspect of modern society, ranging from communications and security to healthcare and industrial automation. Over the last five decades, the relentless pursuit of IC device miniaturization for manufacturing high-performance and high-density very large scale integrated (VLSI) circuits and systems has led to the creation of a digital society[1]. Operating speeds continue to be pushed to increasingly higher and higher frequencies enabling baseband operation in mobile devices in the 30 GHz vicinity, which is expected to provide more bandwidth and lower latency. Millimeter-wave communications will soon become part of the 5G/6G standards, alongside developments to push communications to the THz bands. The availability of bandwidth at these frequencies will offer a multitude of opportunities to increase throughput of a new generation of wireless networks. Although this area of research is relatively new, we witness a tremendous growth in the literature related to the electromagnetic properties of mmWave communications, and in particular, free space propagation loss and its susceptibility to hindrances.

This MQ will present a forum for engineers and scientists to discuss these issues and hear recent developments from experts in areas ranging from transistors and integrated circuits to antennas & propagation and communication networks, and to discuss the challenges faced in design of 6G transceiver systems and networks.

[1]Saha, S.K. (2018) Transitioning Semiconductor Companies Enabling Smart Environments and Integrated Ecosystems. Open Journal of Business and Management, 6, 428-437.


  Date and Time




  • Date: 20 Aug 2022
  • Time: 01:00 AM to 05:30 PM
  • All times are (UTC+08:00) Beijing
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he MQ will be a half-day hybrid event co-located between the CAD-TFT 2022 ( and IFETC 2022 ( conferences, and will take place in the afternoon of Aug 20, 2022 at Haiqing Hotel, Qingdao, China. The online address will be released later.


Huaqiang Wu of Tsinghua University

Dr. Huaqiang Wu is presently the director of the Department of Microelectronics and Nanoelectronics, and the director of the Institute of Microelectronics, Tsinghua University, Beijing, China. Dr. Wu has also served as the deputy director of Beijing Innovation Center for Future Chips. Dr. Wu received his Ph.D. degree in electrical and computer engineering from Cornell University, Ithaca, NY, in 2005. Prior to that, he graduated from Tsinghua University, Beijing, China, in 2000 with double B.S. degrees in material science & engineering and enterprise management. From 2006 to 2008, he was a senior engineer and MTS in Spansion LLC, Sunnyvale, CA. He joined Tsinghua University in 2009. Dr. Wu’s research interests include emerging memory and neuromorphic computing technologies. Dr. Wu has published more than 200 technical papers and owns more than 90 US and China patents. Dr. Wu’s papers have appeared on Nature, Nature Nanotechnology, Proceedings of the IEEE, IEEE EDL, ISSCC, IEDM, VLSI, etc. Currently, Dr. Wu serves as the Technical Program Chair (TPC) for 2021 EDTM conference and TPC member of VLSI Technology, DAC, VLSI-TSA, etc.


Tian-Ling Ren of Tsinghua University

Tian-Ling Ren received his Ph.D. degree in solid-state physics from Department of Modern Applied Physics, Tsinghua University, China in 1997.

He is full professor of Institute of Microelectronics, Tsinghua University since 2003. He has been a visiting professor at Electrical Engineering Department, Stanford University from 2011 to 2012.

For these years, Prof. Ren’s research mainly focused on novel micro/nano electronic devices and key technologies, including nonvolatile memories (RRAM, FeRAM), RF devices (resonator, inductor), sensors, and MEMS. Prof. Ren’s main contributions are that he has developed the new integration methods for novel material based micro/nano device and circuit applications. For examples, he proposed the RRAM structure with integration of single layer graphene, which can drastically decrease the power consumption of the device; he developed the ferroelectric thin film based integrated acoustic devices; he also proposed the graphene sound source devices for the first time; and he realized the high quality ultra-flexible structured RF resonators with very promising applications. He has published more than 300 journal and conference papers. He has more than 40 patents.

He has been an Elected Member at Large, and Distinguished Lecturer of IEEE Electron Devices Society. He is also Council Member of Chinese Society of Micro/Nano Technology. For these years, Prof. Ren has been the technical committee member for several leading international conferences, including International Electron Device Meeting (IEDM), and Device Research Meeting (DRC). He is also editorial board member of Scientific Reports (Nature Publishing Group).