Trends and challenges in Nanoelectronics for the next decade

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Workshop on "THE HORIZON OF DEVICES AND COMPONENTS IN AUTOMOTIVE", in the frame of the International Graduate School for PhD students in Electronics organized by SIE, held in Rende (CS) from September 5 to 7, 2022.


In the last decade nanoelectronics devices have been a driving force for societal applications and for a green sustainable world. Key fields such as security, energy, healthcare, transport, communication and infotainment are gaining more and more market so that microelectronics is becoming an inherent part of everyday life. The research related to nanoelectronics can be grouped in three main directions, i.e., More Moore, Beyond CMOS and More than Moore. General trends and challenges will be addressed.



  Date and Time

  Location

  Hosts

  Registration



  • Date: 07 Sep 2022
  • Time: 10:00 AM to 11:00 AM
  • All times are (UTC+01:00) Rome
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  • Cubo 42/C, 87036, Rende (CS)
  • Rende (CS), Calabria
  • Italy 87036

  • Prof. Felice Crupi, Dept. of Informatics, Modeling, Electronics and Systems Engineering (DIMES), Cubo 42/C, 87036, Rende (CS).

    felice.crupi@dimes.unical.it

  • Co-sponsored by Felice Crupi


  Speakers

Elena Gnani of University of Bologna, Bologna, Italy

Topic:

Trends and challenges in Nanoelectronics for the next decade

In the last decade nanoelectronics devices have been a driving force for societal applications and for a green sustainable world. Key fields such as security, energy, healthcare, transport, communication and infotainment are gaining more and more market so that microelectronics is becoming an inherent part of everyday life. The research related to nanoelectronics can be grouped in three main directions, i.e., More Moore, Beyond CMOS and More than Moore. General trends and challenges will be addressed.

Biography:

Elena Gnani is Associate Professor at the University of Bologna. Her research interests include the development of physical transport models in semiconductor devices and numerical-analysis techniques, with special emphasis on the study of quantum-confined devices, such as FinFETs, silicon nanowires (NW), steep-slope devices as well as quasi ballistic transport in nanoMOSFETs. E. Gnani is author or co-author of more than 180 papers published in referred international journals and in proceedings of major international conferences. She is presently an IEEE Senior Member, EDS Distinguished, member of the EDS Technology Computer Aided Design Committee and serves as an associate editor of the IEEE Transactions on Electron Devices.

Email:

Address:Viale Risorgimento 2, , Bologna, Emilia-Romagna, Italy, 40136