Silicon Carbide and Wide-Bandgap Materials MEMS/NEMS: Fundamentals, Progress, and Emerging Applications

#mems #sensors #SiC #temperature
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Virtual presentation by Prof. Philip Feng from University of Florida

Abstract:

Silicon carbide (SiC), an advanced polymorphic material of great technological importance, possesses very attractive characteristics including wide bandgap, transparency from visible to near infrared, large refractive index, excellent thermal conductivity, very high elastic modulus and remarkable mechanical hardness and chemical inertness.  These attributes make SiC interesting and promising for a number of emerging and critical applications, ranging from high-temperature electronics to sensors and transducers enabled by micro/nanoelectromechanical systems (MEMS/NEMS), to photonics and quantum information processing.  In this talk, I will introduce the fundamentals of NEMS enabled by SiC and other emerging wide-bandgap (WBG) materials, including nanofabrication and signal transduction in these nanodevices.  I will then focus on the development of SiC and WBG MEMS/NEMS devices for sensing, signal processing, and computing, especially in harsh or even extreme environments, including in high-temperature and energetic radiation situations.  Finally, we shall discuss today’s open challenges, opportunities, and future perspectives of advancing fundamental and engineering studies of integrated micro/nanosystems based on SiC and WBG materials and devices. 


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  • Date: 05 Oct 2022
  • Time: 06:30 PM to 08:00 PM
  • All times are (UTC-07:00) Pacific Time (US & Canada)
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  • Contact Event Host

  • Jeronimo Segovia-Fernandez

    Chair, IEEE MEMS & Sensors SFBA Chapter

    http://sites.ieee.org/scv-mems/ 

  • Starts 22 September 2022 08:04 AM
  • Ends 05 October 2022 07:00 PM
  • All times are (UTC-07:00) Pacific Time (US & Canada)
  • No Admission Charge
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  Speakers

Prof. Philip Feng Prof. Philip Feng

Biography:

Philip Feng is a Professor in Electrical & Computer Engineering (ECE) at University of Florida. His research is primarily focused on emerging semiconductor devices and integrated micro/nanosystems (particularly MEMS/NEMS), especially those based on advanced semiconductors (such as SiC, AlN, Ga2O3), 2D materials and their van der Waals heterostructures, quantum devices, and their heterogeneous integration with mainstream technologies. Feng received his Ph.D. in Electrical Engineering from Caltech. His research and educational activities have been recognized by several awards include the National Academy of Engineering (NAE) Grainger Foundation Frontiers of Engineering (FoE) Award, the NSF CAREER Award, the Presidential Early Career Award for Scientists and Engineers (PECASE), and several Best Paper Awards (with his students) at IEEE and other international conferences. He has served for IEEE IEDM/MEMS/Transducers/IFCS, and served as the conference chair for IEEE MEMS 2021.




Agenda

6:30 – 6:45 PM Zoom Registration & Networking

6:50 – 7:00 PM Announcements & Polling

7:00 – 7:45 PM Invited Talk

7:45 – 8:00 PM Questions & Answers