Compact Modeling Solutions for Organic Thin Film Transistors (TFTs)
Compact Modeling Solutions for Organic Thin Film Transistors (TFTs)
Benjamin Iñiguez, IEEE Distinguished Lecturer, Universitat Rovira i Virgili, 43007 Tarragona, Spain
Abstract: We review the physics and modeling of Organic Thin-Film Transistors (OTFTs). We analyze the electrostatic and charge transport mechanisms in these devices. We demonstrate that compact OTFTs models can be developed by using analytical approximate solutions of Poisson's equation considering exponential Density of States (DOS) and on a transport model based on carrier hopping between localized states.. Analytical expressions are developed from the deep subthreshold regime to the well above threshold one. In addition, we present direct methods to extract model parameters.. We analyze drain current characteristics from 150K to 350K and show the temperature dependences of the extracted parameters. We also present capacitance modeling frameworks for OTFTs which are consistent with the developed drain current models. In addition, we study the Flicker noise mechanisms in several OTFT technologies and present suitable models for noise characteristics.
Date and Time
Location
Hosts
Registration
-
Add Event to Calendar
- 205 Dreese Laboratory
- 2015 Neil Avenue
- Columbus, Ohio
- United States 43210
- Building: Dreese
- Room Number: 260
- Click here for Map
- Starts 31 October 2022 06:41 PM UTC
- Ends 15 November 2022 05:55 PM UTC
- No Admission Charge
Agenda
Wed, Nov. 15, 2022
1:00 pm,* HYBRID
260 Dreese Lab (Zoom w/ Pre-regist),
Bio: Prof. Benjamin Iñiguez received the Ph D. Degree in Physics from the Universitat de les Illes Balears (Spain) in 1996. He worked as a Postdoctoral Scientist in the Rensselaer Polytechnic Institute (Troy, NY, USA, 1997-98), and in the Université catholique de Louvain (Louvain-la-Neuve, Belgium, 1998-2001) In 2001 he joined the University Rovira i Virgili, Tarragona, Spain, as an Titular Professor, becoming Full Professor in 2010. His main research interest is the development of CAD models and parameter extraction techniques for advanced electron devices.
He has been co-author of leading author of some of the compact models currently available in CAD tools: the so-called RPI models of a-Si:H and polycrystalline Si Thin Film Transistors (TFTs), the so-called ASM GaN HEMT model or the “MOTFT” amorphous oxide TFT model. He also led the development of the first compact models for several emerging devices,. He has published more than 180 papers in international journals (many of them in EDS ones) and presented more than 190 talks in international conferences. He coordinated two European Union-funded projects and participated or participates as team leader in six more. He obtained the Award from the Catalan Government for the Promotion of University Research in 2004, and the ICREA Academia Award (ICREA Institute, Catalonia) in 2009 and 2014. In 2019 he was elected IEEE Fellow.
He is Member at Large of the Board of Governors (BoG) of IEEE EDS since 2018, Chair of the ED Spain Chapter since 2019, Vice-Chair of the EDS SRC Region 8 since 2019, Editor of IEEE Transactions on Electron Devices since 2016, and was Chair of the EDS Compact Modeling Technical Committee (2017-2021). He was the Editor in Chief of Special Issues in EDS journals. He was the General Chair of eight international conferences and workshops, four international summer schools and thirteen EDS-sponsored Mini-Colloquia. He has supervised or co-supervised 18 Doctoral Thesis. E-mail: benjamin.iniguez@urv.cat