IEEE SCV-SF EDS Mini Colloquium (Hybrid)
IEEE SCV-SF EDS Mini Colloquium (Hybrid)
The Electron Devices Society Santa Clara Valley/San Francisco Chapter with the San Jose State University IEEE student chapter is hosting a mini-colloquium celebrating the 75th anniversary of the invention of the transistor. In this mini-colloquium, we are inviting 3 speakers to each give talks on topics ranging from traditional/planar transistors and advanced transistors to analog technology.
When: Friday, March 24, 2023 – 12 Noon to 2 pm (PST)
Where: This is a hybrid event so speakers and attendees can choose to participate either in person at SJSU Engineering building or online via Zoom.
Registration Link: Here
Contact: hiuyung.wong at ieee.org
Date and Time
Location
Hosts
Registration
- Date: 24 Mar 2023
- Time: 12:00 PM to 02:00 PM
- All times are (UTC-07:00) Pacific Time (US & Canada)
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- 1 Washington Sq
- Charles W. Davidson College of Engineering
- San Jose, California
- United States 95192
- Building: Engineering building
- Starts 07 March 2023 12:00 AM
- Ends 24 March 2023 12:00 PM
- All times are (UTC-07:00) Pacific Time (US & Canada)
- No Admission Charge
Speakers
Prof. Tsu-Jae King Liu of University of California, Berkeley
Sustaining the AI Revolution: Transistor Scaling and Beyond
Advancements in semiconductor integrated circuit (IC) “chip” technology over the past 60+ years have enabled exponential growth in chip functionality with exponential reduction in cost per transistor, resulting in the proliferation of information and communication devices and systems, with revolutionary impact on society; today cloud computing, big data and artificial intelligence are driving the digital transformation of all industries. In this talk I will discuss three dimensions of IC technology advancement – transistor scaling, new computing architectures and new computing paradigms – to usher in the Age of Ambient Intelligence.
Biography:
Tsu-Jae King Liu earned her B.S., M.S. and Ph.D. degrees in electrical engineering at Stanford University in 1984, 1986 and 1994, respectively. From 1992 to 1996, she was member of research staff at the Xerox Palo Alto Research Center (PARC). In 1996, she joined the faculty of the Department of Electrical Engineering and Computer Sciences (EECS) at the University of California, Berkeley, where she is now Dean of the College of Engineering.
Liu is internationally known in academia and industry for her innovations in semiconductor devices and technology, and is highly regarded for her achievements as an instructor, mentor and administrator. She is a fellow of the Institute of Electrical and Electronics Engineers (IEEE), an elected member of the U.S. National Academy of Engineering, a fellow of the U.S. National Academy of Inventors, and Director of Intel Corporation and of Maxlinear, Inc. Her awards and honors include the Intel Outstanding Researcher in Nanotechnology Award, the IEEE Aldert van der Ziel Award for distinguished educational and research contributions to the field of electronic devices and materials, the IEEE Electron Devices Society Education Award, and the Defense Advanced Research Projects Agency (DARPA) Significant Technical Achievement Award for her role in the development of the FinFET, an advanced transistor design used in all high-end computer chips today.
Prof. Debbie G. Senesky of Stanford University
Semiconductors in Extreme Environments
Wide bandgap semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN) and, diamond are well known for their inherent resilience to high-temperature and radiation-rich environments. This makes them attractive electronic platforms for use in space exploration and other extreme-environment applications (e.g., combustion, downhole, hypersonic aircraft). Gallium nitride (GaN) electronics have operated at temperatures as high as 1000°C making it a viable platform for robust space-grade (“tiny-but-tough”) electronics and nano-satellites. Even with this major technological breakthrough, there are still challenges in making GaN in low-cost formats with low defect density for proliferation in “beyond silicon” applications. New communities are adopting this electronic platform for a multitude of emerging device applications including the following: sensing, energy harvesting, actuation, and communication. In this talk, we will review and discuss the benefits of GaN’s two-dimensional electron gas (2DEG) over silicon’s p-n junction for space exploration applications (e.g., radiation-hardened, temperature-tolerant Venus probes). In addition, we will discuss the use of prolonged microgravity environments on the International Space Station (ISS) and commercial stations for future manufacturing of semiconductors for the benefit of life on Earth.
Biography:
Debbie G. Senesky is an Associate Professor at Stanford University in the Aeronautics and Astronautics Department and by courtesy, the Electrical Engineering Department. In addition, she is the Principal Investigator of the EXtreme Environment Microsystems Laboratory (XLab). Her research interests include the extreme-environment sensors, high-temperature electronics for Venus exploration, and nanomaterials synthesis within prolonged microgravity. She received the B.S. degree (2001) in mechanical engineering from the University of Southern California. She received the M.S. degree (2004) and Ph.D. degree (2007) in mechanical engineering from the University of California, Berkeley. She is currently serves as the Site Director for nano@stanford, as well as co-editor for the IEEE Journal of Microelectromechanical Systems (JMEMS) and Sensors (journal). In recognition of her work, she is a recipient of the Emerging Leader Abie Award from AnitaB.org, NASA Early Faculty Career Award, and Alfred P. Sloan Foundation Ph.D. Fellowship Award. More information about Prof. Senesky can be found at xlab.stanford.edu or on Instagram: @astrodebs.
Agenda
Title: Sustaining the AI Revolution: Transistor Scaling and Beyond
Speaker: Prof. Tsu-Jae King Liu
Abstract:
Advancements in semiconductor integrated circuit (IC) “chip” technology over the past 60+ years have enabled exponential growth in chip functionality with exponential reduction in cost per transistor, resulting in the proliferation of information and communication devices and systems, with revolutionary impact on society; today cloud computing, big data and artificial intelligence are driving the digital transformation of all industries. In this talk I will discuss three dimensions of IC technology advancement – transistor scaling, new computing architectures and new computing paradigms – to usher in the Age of Ambient Intelligence.
Speaker Bio:
Tsu-Jae King Liu earned her B.S., M.S. and Ph.D. degrees in electrical engineering at Stanford University in 1984, 1986 and 1994, respectively. From 1992 to 1996, she was member of research staff at the Xerox Palo Alto Research Center (PARC). In 1996, she joined the faculty of the Department of Electrical Engineering and Computer Sciences (EECS) at the University of California, Berkeley, where she is now Dean of the College of Engineering.
Liu is internationally known in academia and industry for her innovations in semiconductor devices and technology, and is highly regarded for her achievements as an instructor, mentor and administrator. She is a fellow of the Institute of Electrical and Electronics Engineers (IEEE), an elected member of the U.S. National Academy of Engineering, a fellow of the U.S. National Academy of Inventors, and Director of Intel Corporation and of Maxlinear, Inc. Her awards and honors include the Intel Outstanding Researcher in Nanotechnology Award, the IEEE Aldert van der Ziel Award for distinguished educational and research contributions to the field of electronic devices and materials, the IEEE Electron Devices Society Education Award, and the Defense Advanced Research Projects Agency (DARPA) Significant Technical Achievement Award for her role in the development of the FinFET, an advanced transistor design used in all high-end computer chips today.
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Title: Semiconductors in Extreme Environments
Speaker: Prof. Debbie G. Senesky
Abstract:
Wide bandgap semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN) and, diamond are well known for their inherent resilience to high-temperature and radiation-rich environments. This makes them attractive electronic platforms for use in space exploration and other extreme-environment applications (e.g., combustion, downhole, hypersonic aircraft). Gallium nitride (GaN) electronics have operated at temperatures as high as 1000°C making it a viable platform for robust space-grade (“tiny-but-tough”) electronics and nano-satellites. Even with this major technological breakthrough, there are still challenges in making GaN in low-cost formats with low defect density for proliferation in “beyond silicon” applications. New communities are adopting this electronic platform for a multitude of emerging device applications including the following: sensing, energy harvesting, actuation, and communication. In this talk, we will review and discuss the benefits of GaN’s two-dimensional electron gas (2DEG) over silicon’s p-n junction for space exploration applications (e.g., radiation-hardened, temperature-tolerant Venus probes). In addition, we will discuss the use of prolonged microgravity environments on the International Space Station (ISS) and commercial stations for future manufacturing of semiconductors for the benefit of life on Earth.
Speaker Bio:
Debbie G. Senesky is an Associate Professor at Stanford University in the Aeronautics and Astronautics Department and by courtesy, the Electrical Engineering Department. In addition, she is the Principal Investigator of the EXtreme Environment Microsystems Laboratory (XLab). Her research interests include the extreme-environment sensors, high-temperature electronics for Venus exploration, and nanomaterials synthesis within prolonged microgravity. She received the B.S. degree (2001) in mechanical engineering from the University of Southern California. She received the M.S. degree (2004) and Ph.D. degree (2007) in mechanical engineering from the University of California, Berkeley. She is currently serves as the Site Director for nano@stanford, as well as co-editor for the IEEE Journal of Microelectromechanical Systems (JMEMS) and Sensors (journal). In recognition of her work, she is a recipient of the Emerging Leader Abie Award from AnitaB.org, NASA Early Faculty Career Award, and Alfred P. Sloan Foundation Ph.D. Fellowship Award. More information about Prof. Senesky can be found at xlab.stanford.edu or on Instagram: @astrodebs.
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Title: The Evolution of Analog Technology
Speaker: Lou N Hutter
Abstract:
Despite the major advancements made in semiconductor technology, the world remains a very analog place. Consequently, analog and power management integrated circuits are ubiquitous in almost every electronic system built today. Analog technology has made significant strides in the past 50+ years, migrating from low-density bipolar-based technologies and SSI products to highly scaled CMOS-based nodes and LSI and VLSI products today. The wide diversity of analog applications has driven a wide diversity of process technologies. This talk will discuss the evolution of analog technology from the 1970s to today and beyond, highlighting the many design constraints that have led to the diverse technology portfolio and rich component sets used today.
Speaker Bio:
Lou is a veteran of the semiconductor industry. He spent 29 years at Texas Instruments Inc., until retiring in 2007, as Director of TI’s Mixed-Signal Technology Development organization where he was responsible for worldwide analog, power, RF SiGe, and mixed-signal technology development, process delivery kits, production ramps, and transfers that supported every business unit in the company. He was elected a TI Fellow in 1995 based on his technical accomplishments and their revenue impact. In 2008, he joined Dongbu HiTek, in Seoul, S. Korea, as Senior Executive Vice President and General Manager of the newly created Analog Foundry Business Unit, where he was responsible for technology development, design enablement, IP development, and sales and marketing. During his tenure there, he increased revenues 4X, added many and significant new customers, and established Dongbu HiTek as a leading analog/power management foundry in the industry. Since 2012, he has been Principal of Lou Hutter Consulting LLC, advising foundries, IDMs, fabless companies, and material suppliers in the areas of analog and power technology, design infrastructure, organizational management, and business development. Lou has 47 U.S. patents, has published over 35 journal articles, has co-authored 1 book entitled Silicon Analog Components, now in its 2nd edition, and other book chapters. He has an MSEE from the Massachusetts Institute of Technology, and resides in Dallas, Texas.
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