Current Status of GaN Power HEMTs



  Date and Time




  • Date: 20 Jun 2023
  • Time: 06:00 PM to 08:00 PM
  • All times are (UTC-04:00) Indiana (East)
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  • EV Building, EV002.184, 1515 Saint-Catherine St West
  • Montreal, Ontario
  • Canada H3G 2W1

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  • Starts 12 June 2023 07:51 PM
  • Ends 20 June 2023 06:00 PM
  • All times are (UTC-04:00) Indiana (East)
  • No Admission Charge


Tanya Kirilova Gachovska of Solantro


Current Status of GaN Power HEMTs

Gallium nitride (GaN) power devices have only recently become commercially available. The new devices enable the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This webinar will review the characteristics and figures of marit of different types GaN devices enhancement and depletion mode and will give the status of vertical GaN power devices. In addition, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues such as unique reverse conduction behavior, dynamic RDS_ON, breakdown mechanisms, thermal design, device availability, and reliability qualification will be also discussed.


Tanya Kirilova Gachovska received her M.Eng., and Ph.D. degrees, all in Electrical Engineering, from the University of Ruse, Bulgaria, in 1995 and 2003. She earned her second Ph.D. Degree in Electrical Engineering (Power Electronics), at the University of Nebraska-Lincoln (UNL), Lincoln, USA in 2012. Her Ph.D. thesis was “Modeling of Power Semiconductor Devices”. She worked as an Assistant Professor at the University of Ruse from 1999 to 2003. She conducted research from 2004 to 2006 and taught for a semester in 2006 at McGill University in Montréal. She worked as a Postdoctoral Research Scientist in the area of Pulsed Electric Fields at UNL from 2012 to 2013. She worked for Solantro Semiconductor, Corp., Ottawa for seven years and now she works for MDA Space Montreal.  Dr. Gachovska authored or coauthored more than 30 technical papers and conference presentations, two books, and two book chapters and holds a world patent in Pulsed Electric Fields. In 2019 Dr. Gachovska become a professional engineer of Ontario. She was PELS Ottawa chair and now PELS Montreal chair. She is PEDCC standard chair and chair for IEEE Standards for “Datasheet Parameters and Tests for Integrated Gate Drivers ” and “Datasheet Parameters and Tests for UVC LED Air Disinfection Chambers”  Dr. Gachovska is a senior IEEE member.


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