Moore’s Law and Radiation Effects on Microelectronics

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The Department of Electrical and Computer Engineering at the University of Saskatchewan has invited two distinguished guests to Saskatoon to speak on radiation effects on microelectronics.

Date: June 19, 2023
Time: 9:30 am - 12:00 pm
Location: Room 2C01, Engineering Building (57 Campus Drive, Saskatoon, SK)
Registration: Not required



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  • 57 Campus Drive
  • Saskatoon, Saskatchewan
  • Canada
  • Building: Engineering Building
  • Room Number: 2C01

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  • Co-sponsored by Department of Electrical and Computer Engineering, University of Saskatchewan


  Speakers

Dr. Dan Fleetwood of Vanderbilt University

Topic:

Moore’s Law and Radiation Effects on Microelectronics

In 1965 Gordon Moore postulated that the number of components in an integrated circuit would double every 1-2 years. This trend still holds, making it one of the longest, sustained geometric progressions in the history of the industrialized world, enabling revolutions in computing and in virtually every aspect of technology that is enabled or enhanced by computing. Transistor dimensions have decreased from tens of microns to ~ 5 nm over this time period. In this presentation, I will discuss how Moore’s Law size and voltage scaling of transistors and integrated circuits have influenced transistor architectures and computing capabilities. The effects of Moore’s Law scaling on the vulnerability of microelectronics to ionizing radiation effects in near-Earth space and terrestrial applications will then be discussed in detail for past, present, and future generations of highly-scaled integrated circuit technologies.

Biography:

Dan Fleetwood received his Ph.D. from Purdue University in 1984. He joined Sandia National Laboratories in 1984 as a Member of the Technical Staff. In 1990, he was named a Distinguished Member of the Technical Staff. Dan accepted a position as Professor of Electrical Engineering at Vanderbilt University in 1999. From 2003-2020 he served as Chairman of Vanderbilt’s Electrical Engineering and Computer Science Department. In 2009 he was named Olin H. Landreth Chair in Engineering. Dan is author or co-author of more than 600 publications on radiation effects, low frequency noise, and defects in microelectronic materials and devices. He received the 2009 IEEE Nuclear and Plasma Sciences Merit Award, the society’s highest technical honor, and is a Fellow of IEEE, the American Physical Society, and the American Association of the Advancement of Science.

Mr. David Hiemstra of MacDonald, Dettwiler & Associates (MDA)

Topic:

Space Radiation Environment Effects Estimation

The seminar provides an overview of the space radiation environment, its effect on spacecraft avionics, models and analysis techniques. Environment effects estimation: models, techniques and flight data are compared.

Biography:

David M. Hiemstra received his B. Eng. & Mgt. (1984) and M. Eng. (1993) degrees in Electrical and Biomedical Engineering, respectively from McMaster University. He is a Senior Member of the IEEE. David joined MacDonald, Dettwiler & Associates (MDA), formally Spar Aerospace, in
1984, where he is a Senior Staff Engineer. He is involved in radiation effects and embedded avionics hardening for space, nuclear, and military applications, systems engineering, advanced infrared and visible focal plane array technology, analog circuit design, and electromagnetic compatibility. His current area of research is radiation effects in commercial off-the-shelf microelectronics. David is currently the technical lead for Gateway Robotics avionics. His space radiation effects experience spans over 25 missions. He is currently collaborating with the University of Saskatchewan on radiation effects in commercial off the shelf electronics. David has taught space radiation effects on embedded avionics at University of Saskatchewan, York University and Canadian aerospace firms. He coordinated radiation effects test programs at the University of Toronto Institute for Aerospace Studies, University of Waterloo, and York University.