IEEE EDS Invited Talk: New materials for high-conductivity narrow interconnects
A major challenge for the continued downscaling of integrated circuits is the resistivity increase of Cu interconnect lines with decreasing dimensions, limiting power efficiency and causing the interconnect delay to exceed the gate delay. This resistivity increase is due to electron scattering at Cu surfaces and grain boundaries and leads to, for example, a 10-fold resistance increase for 10-nm-wide Cu lines. Alternative interconnect materials have the potential to outperform Cu. These include metals with a small electron mean free path to render electron scattering at surfaces and grain boundaries negligible, electropositive metals with spherical Fermi surfaces which minimize surface charge transfer and maximize electron transmission at grain boundaries, anisotropic compounds with preferential transport along the wire direction, and 2D and topological metals.
This talk summarizes classical models that describe conduction in nanoscale wires, discusses different approaches to search for conductive materials that may replace current interconnect metals, and provides a summary of experimental and computational research addressing the interconnect resistivity challenge.
Date and Time
Location
Hosts
Registration
- Date: 22 Sep 2023
- Time: 04:00 PM UTC to 05:00 PM UTC
-
Add Event to Calendar
- 253 Fuller Road
- Albany, New York
- United States 12203
- Building: NFE
- Room Number: 4423
- Starts 14 September 2023 08:06 PM UTC
- Ends 22 September 2023 01:00 PM UTC
- No Admission Charge
Speakers
Prof. Daniel Gall
New materials for high-conductivity narrow interconnects
Biography:
Daniel Gall holds a professor position in the Materials Science and Engineering Department at the Rensselaer Polytechnic Institute. He received his Diploma from the University of Basel, Switzerland, in 1994, and his Ph.D. from the University of Illinois at Urbana-Champaign in 2000. Prof. Gall is a Fellow of the American Vacuum Society, has been a Visiting Scientist at the Frederick Seitz Materials Research Laboratory, Illinois, a Visiting Professor at the Ecole Polytechnic Federal Lausanne, and a Global Initiative of Academic Networks Lecturer. He has served as Assistant Editor and Editorial Board Member for Thin Solid Films, as Associate Editor for the Journal of Vacuum Science and Technology A, as chair for the AVS Advanced Surface Engineering Division, as proceedings editor, session chair, symposium chair, and program chair for the AVS International Symposium and the International Conference for Metallurgical Coatings and Thin Films.
Prof. Gall's research focuses on the development of an atomistic understanding of thin film growth and on the electronic and optical properties of materials. He is studying electron transport in nanowires and epitaxial metal layers and is particularly renown for his work on the resistivity size effect and its impact on interconnect lines in integrated circuits. He also explores synthesis and properties of new transition-metal nitrides, including atomistic processes of layer growth and mechanical, tribological, and opto-electronic properties. His research on transition-metal nitrides was identified as one of "the 100 most important scientific discoveries during the past two and a half decades, supported by the US Department of Energy's Office of Science". He also won the 2006 Alfred H. Geisler Memorial Award for "Outstanding Contributions in Education and Thin Film Growth Research," the Faculty Early Career Development (CAREER) Award from the National Science Foundation, the 2007 Outstanding Research Award from the Rensselaer School of Engineering, the 2008 Early Career Award for "Excellence in Education and Outstanding Research in the Field of Thin Film and Nanostructure Growth," the 2008 IBM Faculty Award for research on "Post-CMOS Nanoelectronics," the 2011 NSF Ceramics Best Highlight Award, the 2011 SPIE Thin Films IV Best Presentation Award, the 2018 Senior Faculty School of Engineering Research Excellence Award, the 2018 and 2019 LAM Research Unlock Ideas Faculty Awards for research on "high-conductivity interconnects," the 2019 IBM Faculty award for "post-Cu metallization" research, and the 2021 Bill Sproul Award and Honorary ICMCTF Lecture for "seminal contributions to furthering the understanding of thin film growth of transition metal nitrides and their electronic, optical, mechanical, and tribological properties". Professor Gall holds two US patents, has authored 3 book chapters and over 190 peer-reviewed journal articles, and has presented his research results in over 100 invited lectures in North America, Europe, and Asia. His students won over 60 poster competitions, best paper awards, and best microscopy awards. Prof. Gall's research is funded by the National Science Foundation, the US Department of Defense, the Semiconductor Research Corporation, the ACS Petroleum Research Fund, IBM, LAM, TEL, and the State of New York.