Impact of Super Junction in Silicon and Wide Bandgap Device Technologies
Title of the talk: Impact of Super Junction in Silicon and Wide Bandgap Device Technologies.
Abstract:
Silicon Unipolar devices were revolutionized with the charge balance concept, introduced in 1978, but widely adapted in lateral power devices in the 80’s and in the vertical power devices in 1990’s. This is because these charge balance concepts enabled these devices to operate beyond its one-dimensional material limits. The invited talk will address the super-junction concept, the impact of the charge balance concepts in Silicon unipolar and bipolar devices such as the Insulated Gate Bipolar Transistors as well as Clustered IGBTs. Key developments in Silicon Carbide devices will also be highlighted. Moreover, it will address the impact in Gallium Nitride power devices – Polarization Super Junction devices and will highlight how these devices can revolutionize the field to achieve ultra-low power loss devices for energy efficiency in the electrical energy dominated society. Key results from the present 1.2 kV PSJ GaN technology will be presented.
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- Conference Room, ECE Department
- IIT Roorkee
- roorkee, Uttaranchal
- India 247667
- Building: ECE
Speakers
Prof. Shankar Madathil of Department of Electronic and Electrical Engineering, University of Sheffield, UK
Impact of Super Junction in Silicon and Wide Bandgap Device Technologies
Silicon Unipolar devices were revolutionized with the charge balance concept, introduced in 1978, but widely adapted in lateral power devices in the 80’s and in the vertical power devices in 1990’s. This is because these charge balance concepts enabled these devices to operate beyond its one-dimensional material limits. The invited talk will address the super-junction concept, the impact of the charge balance concepts in Silicon unipolar and bipolar devices such as the Insulated Gate Bipolar Transistors as well as Clustered IGBTs. Key developments in Silicon Carbide devices will also be highlighted. Moreover, it will address the impact in Gallium Nitride power devices – Polarization Super Junction devices and will highlight how these devices can revolutionize the field to achieve ultra-low power loss devices for energy efficiency in the electrical energy dominated society. Key results from the present 1.2 kV PSJ GaN technology will be presented.