NH IEEE In-Person Meeting: "A Survey of Microwave and Millimeter-Wave Low Noise Amplification Based on FETs and HEMTs" by Dr. Phillip M. Smith
Come hear IEEE 2023 MTT-S Speakers Bureau Lecturer Dr. Phillip M. Smith's presentation on the remarkable progress made over the past several decades in the evolution of transistors (specifically FETs and HEMTs) for low-noise amplifier applications, at frequencies from 1 GHz to 1 THz, ubiquitously needed in areas that include communications, radar, signal detection, remote sensing, radio astronomy, and quantum computing. Devices employing material systems based on the semiconductors GaAs, InP, GaN and Si will be described, where content will include structures, physical/electrical characteristics and performance benchmarks. Various aspects of low noise amplifiers (LNAs) will also be discussed, including circuit design considerations, producibility, reliability, cryogenic operation, dynamic range, robustness and power consumption. Future trends will be forecast. This presentation will help you appreciate the work undertaken to make remarkably reliable LNAs possible for some of the most critical applications in the world, like in the acquisition of telemetry data in the once-in-a-lifetime event of the Voyager 2 spacecraft's encounter with Neptune in 1989, where HEMT-based amps in the National Radio Astronomy Observatory's Very Large Array (VLA) in Socorro, NM were essential to the mission's success. This presentation will be very interesting to MTT-S members for its technical content, and to all in the IEEE for its historic survey. Dr. Smith has almost 40 years of microwave electronics experience in industry, for defense and space applications, from hands-on lab work to R&D leadership. He is an IEEE Life Fellow and has authored over 180 papers. Everyone is welcome, from practitioner to retiree, and student. IEEE events are open to all; you do not have to be a member to attend.
Parking at the Nashua Public Library's parking lot is paid by the hour, via parking meters; see the lot's $/hr rates and location along the southern bank of the Nashua River at https://www.nashuanh.gov/DocumentCenter/View/6306/Downtown-Parking-Brochure-PDF?bidId=.
Date and Time
Location
Hosts
Registration
- Date: 30 Oct 2023
- Time: 06:00 PM to 07:15 PM
- All times are (UTC-04:00) Eastern Time (US & Canada)
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- Nashua Public Library
- 2 Court St.
- Nashua, New Hampshire
- United States 03060
- Room Number: Theater Room
- Starts 27 September 2023 12:03 AM
- Ends 30 October 2023 07:15 PM
- All times are (UTC-04:00) Eastern Time (US & Canada)
- No Admission Charge
Speakers
Dr. Phillip M. Smith of Private Consultant (formerly with BAE)
A SURVEY OF MICROWAVE AND MILLIMETER-WAVE LOW NOISE AMPLIFICATION BASED ON FETS AND HEMTS
Biography:
Phillip M. Smith (S’81-M’82-SM’88-F’05-LF’21) received B.S., M.S. and Ph.D. degrees in electrical engineering from Cornell University, completing his studies in 1981. He then joined the GE Electronics Laboratory in Syracuse, New York, where he performed pioneering work on high-frequency transistors (primarily FETs and HEMTs) and associated monolithic and hybrid circuits, with emphasis on low noise and power amplifiers. In 1996 he was transferred to the Microelectronics Center in Nashua, New Hampshire as part of a Lockheed Martin III-V foundry consolidation, and this operation was later acquired by BAE Systems.
He has held a variety of positions, serving as Director of Microwave Devices & Circuits, with responsibility for devices, MMICs and modules, until 2008, and most recently as Chief Engineer of the Advanced Microwave Products Center, an organization with staffing of 250. His work has spanned the research, development and application of microwave devices and circuits based on GaAs, InP, GaN and Si material systems for a wide range of military, commercial and scientific uses at frequencies from 0.1 to 300 GHz. Honors include selection as a BAE Systems Global Engineering Fellow in 1996 and elevation to the grade of IEEE Fellow in 2005 for “contributions to microwave high electron mobility transistors.” He has authored or coauthored more than 180 publications and presentations (including more than 110 addressing low noise), and has been an active member of the IEEE, serving as member and past Chair of the MTT-S Microwave Low Noise Techniques Committee, as technical program committee member for conferences including IMS, IPRM and IEDM, and as a peer reviewer for several technical publications.
Address:Hollis, NH
Agenda
6:00 PM to 6:15 PM Meet and greet
6:15 PM to 7:15 PM Presentation
7:15 PM Optional dinner with speaker at a nearby restaurant