GaN FET-Based CCM Totem-Pole Bridgeless PFC

#Gallium #nitride #GaN #switching #characteristics #CCM,totem-pole,PFC
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Gallium nitride (GaN) technology has recently gained traction in power conversion applications due to the superior switching characteristics and improved figure of merit. Safety GaNs with low parasitic capacitance and zero reverse recovery lead to higher switching frequency and efficiency, opening up new applications and topology options. Continuous conduction mode (CCM) totem-pole PFC is an example topology that benefits from the GaN merits. Compared with commonly used dual-boost bridgeless PFC topologies, the CCM totem-pole bridgeless PFC reduces the number of semiconductor switches and boost inductors by half, while pushing peak efficiency above 98.5%. The root cause of current spike in the AC crossover region is analyzed and solutions are provided. A 750 W totem-pole PFC prototype is built to characterize the experimental safety GaN with an integrated gate driver and demonstrate the performance.



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  • Hauppauge Radisson
  • 110 Motor Parkway
  • Hauppauge, New York
  • United States 11788

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Lou Diana

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GaN FET-Based CCM Totem-Pole Bridgeless PFC

Gallium nitride (GaN) technology has recently gained traction in power conversion applications due to the superior switching characteristics and improved figure of merit. Safety GaNs with low parasitic capacitance and zero reverse recovery lead to higher switching frequency and efficiency, opening up new applications and topology options. Continuous conduction mode (CCM) totem-pole PFC is an example topology that benefits from the GaN merits. Compared with commonly used dual-boost bridgeless PFC topologies, the CCM totem-pole bridgeless PFC reduces the number of semiconductor switches and boost inductors by half, while pushing peak efficiency above 98.5%. The root cause of current spike in the AC crossover region is analyzed and solutions are provided. A 750 W totem-pole PFC prototype is built to characterize the experimental safety GaN with an integrated gate driver and demonstrate the performance.

Biography:

Lou Diana joined TI in 2004 and has more than 30 years of design experience. Before coming to TI, he designed power systems for space satellites. Lou has a BSEE from New York Institute of Technology and presented numerous design seminars, and conference papers. Lou holds one U.S. patent.