A current challenge of modern science is the development of better electronic components able to work with high frequency and power. Gallium nitride (GaN) is a very good candidate to fulfil these requirements. Their physicochemical properties predispose them for novel electronic devices. The use of gallium nitride in the semiconductor industry is a merit of intense research carried out for over 30 years. Despite the recent progress in GaN-based technology, many challenges must be still overcome in material quality and devices design, and for that reason those materials are still of great interest in both research and technology. In this presentation, recent progresses in GaN-based device along with its applications will be described. Challenges and improvement efforts in the development of GaN-based device will also be discussed.