Silicon on Insulator (SOI): the Enabling Technology for the IoT Era

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No Admission Charge.


The IEEE-MTT Washington DC/Northern Virginia Joint Chapter in collaboration with the Electron Device Society cordially invites you to a Distinguished lecture by Professor Dimitris E. Ioannou, titled “Silicon on Insulator (SOI): the Enabling Technology for the IoT Era” and a night of science and history at the Lyceum in Old Town Alexandria on Tuesday September 20th, 2016 at 6:30 pm reception, 7:00-8:30 pm lecture, followed with a no-host dinner with the speaker at Taverna Cretekou in old town Alexandria.

 IEEE-MTT Washington DC Northern Virginia joint Chapter & IEEE-EDL Distinguished Lecture Information

See the complete meeting announcement: https://events.vtools.ieee.org/m/40732



  Date and Time

  Location

  Hosts

  Registration



  • Date: 20 Sep 2016
  • Time: 06:30 PM to 08:00 PM
  • All times are (GMT-05:00) US/Eastern
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  • 201 S Washington St
  • Alexandria, Virginia
  • United States 22314
  • Building: The Lyceum, 201 S Washington St, Alexandria, VA 22314
  • Room Number: Second Floor
  • Click here for Map

  • Contact MTT Chair Kiki Ikossi

  • Starts 01 September 2016 08:28 AM
  • Ends 20 September 2016 11:59 PM
  • All times are (GMT-05:00) US/Eastern
  • No Admission Charge


  Speakers

Prof. Dimitris E. Ioannou Prof. Dimitris E. Ioannou of George Mason University

Topic:

Silicon on Insulator (SOI): the Enabling Technology for the IoT Era

SOI technology has made tremendous progress over the last thirty years, from a mere curiosity in the early 80’s, to now becoming ubiquitous and present in almost all smart phones and devices, and generally viewed as the technology of choice as we are entering the Internet of Things (IoT) Era. Having the benefit of being involved in SOI technology from its very beginnings, in this talk I will first briefly review the major historical milestones of its development. I will then proceed to discuss the most important features of state of the art SOI technologies, which are responsible for their adoption by the major IDM and Foundry chip manufactures and the Wireless Communications Industry.


As well as the superiority of state of the art SOI over bulk Si for classical CMOS applications (reduced capacitance, increased drive current, scalability, etc.), recent advances include major breakthroughs for RF components and systems: unlike bulk Si, high resistivity SOI substrates have become possible thanks to the presence of the buried oxide (BOX), which in turn minimized losses and made possible the integration of high-quality passives such as inductors, MIM capacitors, tunable capacitors, filters and resonators. High-resistivity substrate is also mandatory for the reduction of parasitic coupling between digital and analog blocks integrated on the same chip, reduction of crosstalk, etc. In the case of large RF signals such as for RF switches in front-end modules, harmful harmonics are regenerated, which are detrimental to the operation of 3G and 4G/LTE communication systems. This problem was recently solved by augmenting high-resistivity SOI substrates with the incorporation of a trap-rich layer right underneath the BOX, which strongly suppresses the presence of mobile carriers and hence the substrate/RF signal coupling, thereby drastically reducing the generation of harmonics.

Biography:

Prof. Dimitris E. Ioannou, ECE Dept., George Mason University, received his BS in Physics (1974) from Thessaloniki University, Greece and the MS (1975) and PhD (1978) in Solid-State Electronics from Manchester University, UK. Prior to joining GMU, he has held positions at Manchester and Middlesex Universities (UK), Democritus University of Thrace (Greece), University of Maryland (USA), and Grenoble Polytechnic (France).

Among his most important contributions: Scanning Electron Microscope (SEM-EBIC) techniques for characterizing electrically active defects and measuring the diffusion length in semiconductor materials; techniques for studying deep traps, carrier lifetime and interface states in Silicon on Insulator (SOI); Schottky and Ohmic contact technology for SiC; physics and reliability (Radiation Hardness, Hot Carriers, NBTI, ESD) of SOI devices, including the discovery of the opposite-channel based carrier-injection and invented a SOI flash memory cell that exploits this phenomenon. His current research interests are on the performance and reliability of nano-scale CMOS and the emerging field of Nanoelectronics. He has authored or coauthored over two hundred and fifty research papers and conference presentations, and has advised more than thirty research students.

He has been active with the IEEE International SOI Conference for over fifteen years, including as technical program chairman (SOI’01), general chairman (SOI’02) and member of the advisory board (SOI’03-05). He is the 2008 Outstanding Research Faculty Award Recipient, Volgenau School of Information Technology and Engineering, George Mason University. In recognition of the importance of his research to Semiconductor Industry he received the prestigious IBM Faculty award twice (04 and 05), was elevated to IEEE Fellow (2010) for “contributions to the reliability and characterization of SOI devices and materials”, and since 2011 has served as an IEEE EDS Distinguished Lecturer (DL).

Email:

Prof. Dimitris E. Ioannou of George Mason University

Topic:

Silicon on Insulator (SOI): the Enabling Technology for the IoT Era

Biography:

Email:





Agenda

  • Door opens at 6:30pm
    • Free parking available at the Lyceum on a first-come basis
    • Metered parking on the street, free after 9:00pm
    • Additional parking at 111 S Pitt St (directions, tel.: (877) 385-4113 for parking prices)
    • Metro stop: Yellow and Blue Line, King street Metro Station (directions)
    • Free King Street Trolley (info)

  • 7:00pm - 8:30pm lecture
  • Dinner with Prof. Dimitris E. Ioannou will follow after the lecture
  • Please, RSVP by email for a preliminary headcount for the restaurant.

 Please see MTT-S Chapter website for further information on future talks.