Sub-5nm Patterning and Applications by Nanoimprint Lithography

#Chapter #17 #technical #lecture
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Nanoimprint lithography (NIL)1 is a cost-effective nano-patterning technology based on the mechanical deformation of a resist. It is capable of high-resolution, large-area, high-throughput and low-cost patterning. Moreover, it can be used to pattern 3D nanostructures and on non-flat and flexible substrate. The resolution of NIL is limited by the available NIL mold. Helium ion beam lithography (HIBL)2 is a recently developed technology. It works in a way similar to electron-beam lithography (EBL), except replacing the electron beam with a Helium ion beam. Due to the smaller beam spot size and less forward and backward scattering of Helium ions, HIBL has better resolution than EBL. However, HIBL has very low throughput and it can damage certain substrates. The drawbacks of both technologies can be solved by combining them: using HIBL to make high-resolution NIL molds, and then using NIL to pattern real samples with those mold. In this way, we have demonstrated high-resolution patterning down to 4 nm half-pitch3. We fabricated Graphene nanoribbons with dense lines down to 4 nm half-pitch using Helium ion beam lithography. Our Raman spectra show that the HIBL patterned Graphene nanoribbons (GNRs) have lower line-edge roughness than reported GNRs patterned by EBL. Field effect transistor (FETs) based on those GNRs were also demonstrated. Bandgap of 88 meV was observed for the first time in GNRs with width of 6 nm and NO2 gas sensors were demonstrated using those GNRs4. At the end of the talk, a few other applications based on nano-photonics will be briefly reviewed too.


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  • Date: 17 Aug 2016
  • Time: 10:00 AM to 11:30 AM
  • All times are (GMT-05:00) America/Detroit
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  • 1301 Beal Ave
  • Ann Arbor, Michigan
  • United States 48109
  • Building: 1311 EECS Building - University of Michigan
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  • Starts 10 August 2016 12:01 PM
  • Ends 16 August 2016 12:01 PM
  • All times are (GMT-05:00) America/Detroit
  • No Admission Charge




Bio

Wei Wu graduated from Peking University with a BS in Physics in 1996, and received a Ph.D. in Electrical Engineering from Princeton University in 2003. He joined the Ming Hsieh Department of Electrical Engineering at the University of Southern California as an associate Professor January, 2012. Before joining USC, he had worked as research associate, scientist and senior scientist at HP labs.