Dr Hoang-Phuong Phan of University of New South Wales

Biography:

Wide bandgap materials such as silicon carbide (SiC), III-Nitride, and diamond-like carbon are considered the post-silicon era semiconductors. Their superior physical and chemical properties offer unique functionalities for several industrial applications. Among these, SiC emerges as a strong candidate thanks to its large breakdown voltages, facilitating the development of high-power electronic devices currently used in solar power modules and electric vehicle drive converters. Advancements in the synthesis of nanothin films of SiC on large-scale Si wafers have broadened its utilization, especially in the field of Nano Electromechanical Systems (NEMS), where the well-established fabrication technologies of Si can be deployed in this class of material. The high temperature tolerance, chemical inertness, and mechanical flexibility of SiC nanothin films enable a new cluster of NEMS devices that can be used under extreme environments where Si-based counterparts cannot properly operate. This talk will provide an overview of our recent findings on the physics of SiC nanomembranes, engineering routes to micromachine 2D and 3D SiC structures, and highlights of their applications in energy, structural health monitoring, and personalized healthcare.