Technical Talk on "GaN HEMTs Device Modeling Techniques for RF and Power"
This is a very Basic Talk on GaN HEMT by Dr. Ahmad Khusro meant primarily for the undergraduate and post graduate students of Electrical and Electronics and Communication Engineering.
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- Co-sponsored by Department of Electrical Engineering, Jamia Millia Islamia, New Delhi-110025
- Starts 18 April 2024 06:30 PM UTC
- Ends 02 May 2024 06:30 PM UTC
- No Admission Charge
Speakers
Dr. Ahmad Khusro of Nazarbayev University, Asthana, Kazakhstan.
Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) Device Modeling Techniques for RF and Power
Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) Device Modeling Techniques for RF and Power
Biography:
Dr. Ahmad Khusro has completed his M. Tech. as well as Ph. D. from the Department of Electrical Engineering, Jamia Millia Islamia, New Delhi. Later he worked as a Post-Doctoral Researcher at Nano Lab at Indian Institute of Technology, Kanpur. He worked as a full time Assistant Professor at the Lovely Professional University, Chandigarh, Punjab. Presently he is Post Doc Fellow at the Nazarbayev University in Kazakhstan.
Email:
Address:Nazarbayev University, , Asthana, Kazakhstan, 144411