Tanya Gachovska of MDA

When a power electronics application is discussed, the most important parts are topology and switches (Si MOSFETs or IGBTs, SiC MOSFETs or JFET, or GaN HEMTs). However every switch requires a gate driver, a power amplifier that receives a low-power input from a controller and produces a high-current driving output for the gate of high-power switches. There are different type drivers: non isolated, level shifted and isolated; one driver, half and full bridge drivers or three drivers in one package. Some gate drivers have protection features such as fast short-circuit protection (e.g. DESAT), active Miller clamp, shoot-through protection, shutdown, and overcurrent protection, which make them well-suited for both silicon and wide-bandgap power devices.   Selection of proper driver is also important. In this seminar different types of gate drivers and parameters that need to be taken in account when selecting of a gate driver will be discussed. 

Biography:

Tanya Kirilova Gachovska received her M.Eng., and Ph.D. degrees, all in Electrical Engineering, from the University of Ruse, Bulgaria, in 1995 and 2003. She earned her second Ph.D. Degree in Electrical Engineering (Power Electronics), at the University of Nebraska-Lincoln (UNL), Lincoln, USA in 2012. Her Ph.D. thesis was “Modeling of Power Semiconductor Devices”. She worked as an Assistant Professor at the University of Ruse from 1999 to 2003. She conducted research from 2004 to 2006 and taught for a semester in 2006 at McGill University in Montréal. She worked as a Postdoctoral Research Scientist in the area of Pulsed Electric Fields at UNL from 2012 to 2013. She worked for Solantro Semiconductor, Corp., Ottawa for seven years and now she works for MDA Space Montreal.  Dr. Gachovska authored or coauthored more than 30 technical papers and conference presentations, two books, and two book chapters and holds a world patent in Pulsed Electric Fields. In 2019 Dr. Gachovska become a professional engineer of Ontario. She was PELS Ottawa chair and now PELS Montreal chair. She is PEDCC standard chair and chair for IEEE Standards for Datasheet Parameters and Tests for Integrated Gate Drivers, and Datasheet Parameters and Tests for UVC LED Air Disinfection Chambers Dr. Gachovska is a senior IEEE member.

Email:

Address:305 Rue des Bruants, , Pincourt, Canada, J7V 9W3