Quantum Dots in III-V Heterojunctions for space solar cells

#STEM #devices #nanoelectronics #nanotechnology #solar #electron
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Hybrid III-V based nanoPV for space applications


Quantum dots added in the depletion region of Schottky III-V based solar cells for high current nanodevices



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  Location

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  • Date: 30 Oct 2024
  • Time: 06:30 PM to 07:30 PM
  • All times are (UTC-04:00) Eastern Time (US & Canada)
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  • 204 Monroe Ave
  • Physics and Engineering Dept
  • University of Scranton, Pennsylvania
  • United States 18510
  • Building: Loyola Science Center (LSC)
  • Room Number: 334

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  • Co-sponsored by EDS Student Branch, Physics & Engineering Dept, University of Scranton
  • Starts 31 July 2024 12:00 AM
  • Ends 30 October 2024 12:00 AM
  • All times are (UTC-04:00) Eastern Time (US & Canada)
  • No Admission Charge


  Speakers

Argyrios of University of Scranton

Topic:

Quantum Dots in III-V Heterojunctions for space solar cells

The talk will focus around the advantages  of including quantum dots in the depletion of a Schottky Barrier (SB) structure with a two-fold goal: (a) to provide quantum traps for photo-excited carriers in the depletion region by growing quantum dots at preselected solar wavelength ranges (b) to generate excess  thermionically carriers to the conduction band of the semiconductor, leading to current increase.

Biography:

Dr Varonides BS, MS (Phys), PhD (EE) is Professor at the Physics & Engineering Dept, at the University of Scranton. His interests include quantum transport mechanisms in modern nano-devices as implemented  in photovoltaics (terrestrial & space) and electronic devices in general. His primary interests circle around modern electronic devices, electromagentics and applied quantum theory. The list of his  favorite courses includes quantum mechanics, solid state physics and devices, nanotechnology, applied electromagnetics, plasma physics. Of specific interest to him are 2-D 1-D and 0-D electronic devices and their applications. His current work deals with carrier transport in graphene-based nanodevices such as G-Oxide-Semiconductor Heterojunctions.

 

 

 

Email:

Address:204 Monroe Ave, Physics and Engineering Dept, University of Scranton, Pennsylvania, United States, 18510