IEEE CTS Computer Society San Antonio - Non Volatile Memory

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Emerging Non-Volatile Memory - from Devices to Architectures



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  • Date: 21 Feb 2017
  • Time: 07:00 PM to 08:30 PM
  • All times are (GMT-06:00) US/Central
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  • 1 Camino Santa Maria
  • San Antonio, Texas
  • United States 78228
  • Building: University Center
  • Room Number: Conference Room C

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  • Starts 01 February 2017 12:00 AM
  • Ends 21 February 2017 12:00 AM
  • All times are (GMT-06:00) US/Central
  • No Admission Charge


  Speakers

Professor Ethan C. Ahn Professor Ethan C. Ahn of University of Texas at San Antonio

Topic:

Emerging Non-Volatile Memory - from Devices to Architectures

 


With the advent of so-called ‘abundant data’ era and the required throughput and energy-efficiency for the next-generation computing paradigm, it becomes increasingly important to explore more scalable approaches for both computational (logic) and information storage (memory) devices. Significant progress on emerging non-volatile memory (NVM) technologies such as spin-transfer-torque magnetic random access memory (STT-MRAM), resistive RAM (RRAM), or phase-change memory (PCM), made it possible to replace the mainstream NVM (NAND Flash) and even reach certain on-chip memory requirements (e.g., L2/L3 SRAM cache). The status, key challenges, visions, and promising applications of the RRAM, PCM, and STT-MRAM technologies will be briefly compared and discussed in the talk.


 


 

Biography:

Dr. Ahn is currently a tenure-track Assistant Professor of Electrical Engineering at The University of Texas at San Antonio. Previously he served as a Senior Panel Process Engineer at Apple, Inc. (Cupertino, CA) and as a post-doctoral researcher at Stanford University. He received his Ph.D. in EE at Stanford University in 2015, under the supervision of Professor H.-S. Philip Wong. He joined Stanford in 2010, after a 3-year research career on the STT-MRAM technology with the Korea Institute of Science and Technology (KIST) in Seoul, Korea. He received the B.S. and M.S. degrees in EE from the Korea Advanced Institute of Science and Technology (KAIST) in Daejeon, Korea, in 2005 and 2007, respectively. He is the author of over 30 peer-reviewed research journal and conference papers and wrote one book chapter of Emerging Nanoelectronic Devices. His primary research interests include energy-efficient nanoscale logic and memory devices, carbon-based and other 2D-layered nano-materials, electronic/thermal/magnetic transport in nanoscale devices, and novel energy devices for beyond-CMOS domain. Dr. Ahn has been the recipient of numerous awards and honors, including John Bardeen Student Research Award for Excellence in Nanodevice Research in 2014 and Best Summer Research Intern Award by T.-C. Chen at IBM T. J. Watson in 2013.  

Email:

Address:Assistant Professor of Electrical Engineering, University of Texas at San Antonio, San Antonio, United States

Professor Ethan C. Ahn of University of Texas at San Antonio

Topic:

Emerging Non-Volatile Memory - from Devices to Architectures

Biography:

Email:

Address:San Antonio, United States






Agenda

Introduction

Presentation by Dr. Ethan C. Ahn