3D MEMORY SYSTEMS

#3D #Memory #Systems #Architecture #DRAM #SRAM
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MTT/AP Talk


Die-stacked 3D DRAM technology can provide low-energy high-bandwidth memory module by vertically integrating several dies within the same chip. However, the size of such 3D memory is unlikely to be sufficient to provide the full memory capacity, so future memory systems are likely to use 3D DRAM together with traditional off-chip DRAM. In-fact, such systems are already being announced by the industry. This talk will discuss our work on architecting DRAM caches and share some of the insights and experiences that run counter to the well-established conventional wisdom in cache design.

It will be shown that some of the basic design decisions typically made for conventional caches (such as serialization of tag and data access, large associativity, and update of replacement state) are detrimental to the performance of DRAM caches, as they increase the hit latency. The talk will present Alloy Cache, a simple latency-optimized DRAM cache design that can outperform even an impractical SRAM tag-store design, which would incur an unacceptable overhead of several tens of megabytes. The talk will also present our CAMEO architecture that allows “Gigascale” DRAM caches to not only be transparently managed by the hardware but also to contribute to the OS-visible main-memory capacity. The talk will then analyze the bandwidth consumed by management operations (miss detection, install, write-backs etc.), show that these operations consume as much as 3x the cache bandwidth compared to the bandwidth consumed by data transfer on a cache hit, and present simple solutions to mitigate this bandwidth bloat. If time permits, the talk will also briefly discuss schemes that can proactively reduce the DRAM cache hit-rate to improve overall system performance.



  Date and Time

  Location

  Hosts

  Registration



  • Add_To_Calendar_icon Add Event to Calendar
  • 154 Summit Street, Newark, NJ 07102
  • Newark, New Jersey
  • United States 07102
  • Building: ECEC
  • Room Number: 202
  • Click here for Map

  • Contact Event Host
  • Dr. Durga Misra, +1-973-596-5739, email: dmisra@ieee.org

    Dr. Ajay K. Poddar, Ph.: 201-560-3806, email:akpoddar@ieee.org

    Dr. Edip Niver, email: edip.niver@njit.edu

  • Co-sponsored by AP01/MTT17
  • Starts 12 January 2017 01:00 PM UTC
  • Ends 19 January 2017 05:00 PM UTC
  • No Admission Charge


  Speakers

Dr. Moinuddin Qureshi of School of Electrical and Computer Engineering, Georgia Institute of Technology

Topic:

3D Memory Systems

Die-stacked 3D DRAM technology can provide low-energy high-bandwidth memory module by vertically integrating several dies within the same chip. However, the size of such 3D memory is unlikely to be sufficient to provide the full memory capacity, so future memory systems are likely to use 3D DRAM together with traditional off-chip DRAM. In-fact, such systems are already being announced by the industry. This talk will discuss our work on architecting DRAM caches and share some of the insights and experiences that run counter to the well-established conventional wisdom in cache design. It will be shown that some of the basic design decisions typically made for conventional caches (such as serialization of tag and data access, large associativity, and update of replacement state) are detrimental to the performance of DRAM caches, as they increase the hit latency. The talk will present Alloy Cache, a simple latency-optimized DRAM cache design that can outperform even an impractical SRAM tag-store design, which would incur an unacceptable overhead of several tens of megabytes. The talk will also present our CAMEO architecture that allows “Gigascale” DRAM caches to not only be transparently managed by the hardware but also to contribute to the OS-visible main-memory capacity. The talk will then analyze the bandwidth consumed by management operations (miss detection, install, write-backs etc.), show that these operations consume as much as 3x the cache bandwidth compared to the bandwidth consumed by data transfer on a cache hit, and present simple solutions to mitigate this bandwidth bloat. If time permits, the talk will also briefly discuss schemes that can proactively reduce the DRAM cache hit-rate to improve overall system performance.

Biography:

Professor Moinuddin Qureshi is an Associate Professor at the Georgia Institute of Technology. His research interests include computer architecture, scalable memory systems, fault tolerant computing, and analytical modeling of computer systems. Prior to joining Georgia Tech, he was a research staff member at IBM T.J. Watson Research Center, where he contributed to the design of efficient caching algorithms for Power 7 processors, and received the IBM outstanding technical achievement award for his studies on emerging memory technologies for server processors. He is an inventor of more than two-dozen U.S. patents (approved) and has 30+ publications in flagship architecture conferences. He served as the Program Chair for MICRO 2015 and is currently serving as the selection committee co-chair for IEEE MICRO Top Picks 2017. Dr. Qureshi received his Ph.D. (2007) and M.S. (2003), both in Electrical Engineering from the University of Texas at Austin, and B.E. (2000) degree from University of Mumbai.

Email:

Address:School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, United States, 30318

Dr. Moinuddin Qureshi of School of Electrical and Computer Engineering, Georgia Institute of Technology

Topic:

3D Memory Systems

Biography:

Email:

Address:Atlanta, United States






Agenda

Event Time:11:00 AM to 12:30 PM

11:00 AM - Refreshments and Networking

11:30AM-12:30 PM: Talk by Prof. Moinuddin Qureshi of Georgia Institute of Technology

Seminar in ECE 202 All Welcome: There is no fee/charge for attending IEEE technical semiar. You don't have to be an IEEE Member to attend. Refreshmen is free for all attendess. Please invite your friends and colleagues to take advantages of this Invited Distinguished Lecture.