Dr. Deep Jariwala of U Penn

Silicon has been the dominant material for electronic computing for decades, but it is well-known that Moore’s law is long dead. Therefore, a fervent search for (i) new semiconductors that could directly replace silicon or (ii) new architectures with novel materials/devices added onto silicon or (iii) new physics/state-variables or a combination of above has been the subject of much of the electronic materials and devices research of the past 2 decades. This is not possible without fundamental innovation in new electronic materials and devices. Therefore, I will make the case that novel layered two-dimensional (2D) chalcogenide materials and three-dimensional (3D) nitride materials might present interesting avenues to overcome some of the limitations being faced by Silicon hardware. I will present our work on integration of 2D chalcogenide semiconductors with Silicon to realize low-power tunnelling field effect transistors. In particular I will focus on In-Se based 2D semiconductors for this application and extend discussion on them to phase-pure, epitaxial thin-film growth over wafer scales, at temperatures low-enough to be compatible with back end of line (BEOL) processing in Silicon fabs. I will then discuss memory devices from 2D materials when integrated with emerging wurtzite structure ferroelectric nitride materials namely aluminium scandium nitride (AlScN). First, I will present on Ferroelectric Field Effect Transistors (FEFETs) made from 2D materials when integrated with AlScN and make the case for 2D semiconductors in this application. Next I will introduce our work on Ferroelectric Diode (FeD) devices also based on thin AlScN. I will also present how FeDs provide a unique advantage in compute-in-memory (CIM) architectures for efficient storage, search and hardware implementation of neural networks. Finally, I will present ongoing work and opportunities to extend the application of AlScN ferrodiodes into extreme environments, scaling them and integration with SiC electronics. I will end the talk with a broad perspective on the role of novel materials and heterostructures in semiconductor technologies for electronic computing.

Biography:

Deep Jariwala is an Associate Professor and the Peter & Susanne Armstrong Distinguished Scholar in the Electrical and Systems Engineering as well as Materials Science and Engineering at the University of Pennsylvania (Penn). Deep completed his undergraduate degree in Metallurgical Engineering from the Indian Institute of Technology in Varanasi and his Ph.D. in Materials Science and Engineering at Northwestern University. Deep was a Resnick Prize Postdoctoral Fellow at Caltech before joining Penn to start his own research group. His research interests broadly lie at the intersection of new materials, surface science and solid-state devices for computing, opto-electronics and energy harvesting applications in addition to the development of correlated and functional imaging techniques. Deep’s research has been widely recognized with several awards from professional societies, funding bodies, industries as well as private foundations the most notable ones being the Optica Adolph Lomb Medal, the Bell Labs Prize, the AVS Peter Mark Memorial Award, IEEE Photonics Society Young Investigator Award, IEEE Nanotechnology Council Young Investigator Award, IUPAP Early Career Scientist Prize in Semiconductors and the Alfred P. Sloan Fellowship. He has published over 150 journal papers with more than 20000 citations and holds several patents.

Email:

Address:3330 Walnut St, 360 Levine Hall, Philadelphia, Pennsylvania, United States, 19104