Heterogeneous integration of III-V nanowires on Group IV substrates and applications

#III-V #nanowires #FETs

Abstract: III-V compound semiconductor nanowires (NWs) have been attracted much attention as
alternative materials for future electronics and optics. Heterogeneous integration of the vertical III-V
NWs is important for the device applications. The selective-area growth achieved to align vertical IIIV
NWs on Si by making As-incorporated Si(111) 1´1 surface and to form modulation-doped coremultishell
(CMS), axial QD nuclei and CMS double heterostructures. Here we report on recent
progress in selective-area growth of III-V NWs on Si and their applications such as light-emitting
diodes (LEDs), field-effect transistors (FETs), and tunnel FETs (TFETs) using III-V/Si heterojunctions.
III-V nanowires (NWs) with CMS double heterostructure integrated on Si platform are promising
materials as vertical TFET application. There are still challenges in using TFETs for building energyefficient
circuits application, which requires a moderately high conductance and steep SS for
several decades of currents. This means high quality tunnel junctions should be further designed for
satisfying these requirements for future ICs. A level of scalability and complementary switching
similar to that of conventional FETs must also be assured. We present a vertical gate-all-around
(VGAA) TFET that uses our designed vertical InGaAs NW/Si heterojunction with modulation doped
CMS NW and demonstrate steep subthreshold slope as well as enhancement of tunnelling
current. And I will introduce current project for next-generation electronics and photonics.

Bio: Katsuhiro Tomioka received his B.E., M.S. degrees of electrical engineering from Gunma
University, Gunma, Japan, in 2003, 2005 (Prof. S. Adachi), and Ph.D. degrees of electronics and
information engineering from Hokkaido University, Sapporo, Japan, in 2008 (Prof. T. Fukui). He has
over 100 journal papers and 6 book chapters, with over 5,000 citations and a h-index of 32. He is
also a co-inventor in over 30 World and Japanese patents related to nanowire LED, laser
diodes, transistor, and nanowire integrations. Since 2016, he is associate Professor, Hokkaido
University. His current research area is on the formation of semiconductor nanowires and devices
for future application to low-power electrical switches and optical devices.

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• The Australian National University
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• Australia
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