IEEE EDS Talk on "Vertical GaN Power Devices: A new paradigm of power electronics!" by Prof. Biplab Sarkar, IIT Roorkee
Commercial GaN HEMT technology is already disrupting the market; whereas a massive global investment has gone to develop vertical GaN devices that are likely to outperform the current lateral GaN HEMTs. However, vertical GaN devices have their own issues such as crystal growth, cost, processing related challenges etc. Some of these challenges invite theoretical limits to the device performance; one such limit is the Schottky barrier height. Moreover, to leverage upon the benefits of operating GaN under extremely harsh environmental conditions, one needs to drive the GaN power/RF devices using GaN CMOS – a complete monolithic package. In this talk, Dr. Sarkar will introduce the foundational concepts of vertical GaN diodes and transistors. In particular, Dr. Sarkar will speak about GaN Camel Diode: a promising device that overcomes multiple theoretical limits set by material and/or processing related issues. The talk will also cover novel Mg-diffusion technology in GaN; a unique process Dr. Sarkar has co-developed with Nagoya University (Japan) for selective p-type doping of n-GaN.
Date and Time
Location
Hosts
Registration
- Date: 19 Mar 2025
- Time: 09:30 AM UTC to 10:30 AM UTC
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- Seminar Room
- Indian Institute of Technology Guwahati
- Guwahati, Assam
- India 781039
- Building: Department of Electronics and Electrical Engineering
Speakers
Dr Biplab Sarkar of Indian Institute of Technology Roorkee
IEEE EDS Talk on 'Vertical GaN Power Devices – a new paradigm of power electronics!'
Commercial GaN HEMT technology is already disrupting the market; whereas a massive global investment has gone to develop vertical GaN devices that are likely to outperform the current lateral GaN HEMTs. However, vertical GaN devices have their own issues such as crystal growth, cost, processing related challenges etc. Some of these challenges invite theoretical limits to the device performance; one such limit is the Schottky barrier height. Moreover, to leverage upon the benefits of operating GaN under extremely harsh environmental conditions, one needs to drive the GaN power/RF devices using GaN CMOS – a complete monolithic package. In this talk, Dr. Sarkar will introduce the foundational concepts of vertical GaN diodes and transistors. In particular, Dr. Sarkar will speak about GaN Camel Diode: a promising device that overcomes multiple theoretical limits set by material and/or processing related issues. The talk will also cover novel Mg-diffusion technology in GaN; a unique process Dr. Sarkar has co-developed with Nagoya University (Japan) for selective p-type doping of n-GaN.
Biography:
Dr. Biplab Sarkar is an Associate Professor in the Department of ECE, IIT Roorkee. He received the B.Tech. degree in ECE from NERIST in 2010; M.Tech in EE from IIT Bombay in 2012, and Ph.D. in EE from the NC State University (USA) in 2015. His research interests include wide bandgap semiconductor devices, circuits and device-circuit interactions. He is a recipient of multiple prestigious international awards such as JSPS Fellow (Japan, 2021 & 2023), “New Faces in Compound Semiconductors” in University of Michigan, USA, in 2022. He has served as visiting faculty in three Universities viz. NC State University (USA), Nagoya University (Japan) and King Abdullah University of Science and Technology (Saudi Arabia). He has nearly 55 journal articles; and has served as an “invited speaker” in multiple international conferences.
Email:
Address:Department of Electronics and Communications Engineering, Indian Institute of Technology Roorkee, Roorkee, Uttaranchal, India