Orlando Auciello of Erik Jonsson School of Engineering and Computer Science

Materials Science / Film Growth Process /Technology Development for Film-Based Non-Volatile Memory Devices, Super High-k Dielectric Films for Energy Storage Super-capacitors and Integrated with Diamond for Transformational Diamond Electronics 

TThis Plenary Talk will focus on describing fundamental/applied materials science and engineering performed to develop new generation of transformational multifunctional films (coating), involving physical/chemical/ mechanical/electronics/MEMS/NEMS/biomedical phenomena enabling transformational new ggenerations of memories, high-k dielectric films integrated with silicon, diamond and biomedical devices

to-present.

  • Materials Science to develop transformational TiO_x/Al₂O₃ and HfO₂/ TiO_x nanolaminates, exhibiting giant dielectric

   constant (up to k=1000), low leakage current (~10^-9 A/cm², low losses (tan d= 0.04). The physics underlying the giant

   dielectric constant is based on the Maxwell-Wagner relaxation mechanism, whereby the dielectric constant is controlled

   by oxygen vacancies at the nanolaminate interfaces.

  • Materials science, device design /lithography/RIE fabrication processes, involving integration of super-high-k dielectric

   nanolaminates/ Hydrogen surface terminated single crystal diamond, demonstrating diamond-based MOSFET devices

1996-present Auciello pioneered R&D on unique multifunctional TiAl alloy films, as oxygen diffusion barrier. The TiAl barrier film are used to integrate piezoelectric films with novel multifunctional ultrananocrystalline diamond (UNCD) films, to develop transformational piezo-actuated UNCD-MEMS devices with highest performance demonstrated today. The TiAl alloys in TiAlO_x films exhibit higher high-dielectric constant (30-35) than HfO₂, and in fransformational TiOx/A₂O₃ nanolaminates exhibit super-high dielectric constant (~1000) to replace SiO₂ in next generations nanoscale CMOS devices and produce super-capacitors for energy storge (see Graphical Abstract).

Biography:

Summary Biography
Graduated with honors: M.S. (1973) and Ph.D. (1976) in Physics– Institute “Balseiro”/Universidad Nacional Cuyo-Argentina); Electronic Engineering-Universidad Nacional Córdoba-Argentina (1964-1970). Postdoctoral-McMaster University - Canada (1977-1979); Researcher-Toronto University-Canada (1979-1984), Associate Professor-North Carolina State University-USA (1984-1988), Distinguished Scientist (Microelectronics Center North Carolina)-USA (1988-1996), Distinguished Fellow-Argonne National Laboratory-USA (1996-2012 Distinguished Endowed Chair Professor-University Texas-Dallas (2012-present). Auciello Directs basic/applied research on several fields, namely:

• Multifunctional oxide [ferroelectric (piezoelectric) films /contributed to development of non- volatile  

 Ferroelectric Random-Access Memories (FeRAMS) (1984-2000) - currently in the worldwide market.

• Nanolaminate oxide films with super-high dielectric constant for new generations gates in Si and

  future diamond - based micro/nanoelectronics and energy storage super-capacitors.

• Nanocarbon films (novel ultrananocrystalline diamond (UNCD^TM)/ graphene) and applications to

  industrial/high-tech/medical devices/prostheses.

  • UNCD^TM-industrial products (UNCD-coated mechanical pump seals and bearings, UNCD-

   coated AFM tips, marketed by ADT (Auciello and colleague co-founders-2003, profitable-2012,

   sold for profit to large company-2019).

  • Original Biomedical Implants ((OBI-USA/2013-present) and OBI-México (2016-present)

  (Auciello co-founder), are developing new generations medical devices/prostheses. Publications: 33 books/500 articles, 26 patents, Associate Editor APL, Integrated Ferroelectrics, Functional Diamond, Coatings). President-Materials Research Society (MRS)-USA (2013). Selected Awards (from 18): Fellow-American Association for Advancement of Science (AAAS), MRS, and International Association of Advanced Materials (IAAM); ‘IAAM Scientist Medal’-2023; Best Creativity Award - Gran Final Innostar China-USA International Technology Innovation Competition-2019; Seven R&D 100 Awards.

Email:

Address:Erik Jonsson School of Engineering and Computer Science, 800 West Campbell Rd., M/S RL10, Richardson, TX 75080-3021, United States