IEEE Sensors Council DL seminar on "TERAHERTZ SENSING TECHNOLOGY"

#CH08850 #Seminar #Lecture #motioncapture

The illustrious history of terahertz (THz) imaging and sensing is nearly 50 years long. During this time,

photonic and electronic THz technology has developed a lot, but it has not been able yet to bridge the

famous THz gap between electronic and photonic devices. In the THz range of frequencies, a low photon

energy (smaller than the room temperature thermal energy) makes the development of efficient THz lasers

to be a challenge. And the cutoff frequency and maximum frequency of operation of field effect and bipolar

transistors struggles to reach one THz. TeraFETs – short-channel Si CMOS, SOI, FINFETs, GaAs-based and GaN-

based HEMTs – operating in a new “plasmonic” regime – form unit cells of such plasmonic crystals. TeraFETs

have the potential to become a dominant THz electronics technology. Deep submicron Si CMOS TeraFET

circuits could support THz sensing, which is the key to a dramatic cost reduction of the THz technology

deployment.

Many theoretical and modeling papers and a few experimental papers have revealed the

enormous potential of the TeraFET plasmonic crystal technology. Reaching this potential

requires understanding of new counterintuitive physics of TeraFET plasmonic

crystals. This physics involves the propagating, decaying, or growing waves

of the electron density – plasma waves” - similar to water and sound

waves driven by wind.

• Date: 15 Apr 2025
• Time: 01:00 PM UTC to 02:00 PM UTC
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• University of Naples "Parthenope" Aula Savarese, Centro Direzionale Isola C4, Napoli & online
• Naples, Campania
• Italy

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