IEEE Boston SSCS Distinguished Lecture Dr. Alvin Loke: The Road to Gate-All-Around CMOS

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IEEE Boston SSCS Distinguished Lecture Dr. Alvin Loke 

Title:

The Road to Gate-All-Around CMOS

Abstract:

Despite the much debated end of Moore's Law, CMOS scaling still maintains economic relevance with 3nm finFET SoCs already in the marketplace for over a year and 2nm gate-all-around SoCs well into risk production. Modest feature size reduction and design/technology innovations co-optimized for primarily logic scaling continue to offer compelling node-to-node power, performance, area, and cost benefits. In this tutorial, we will start with a walk through memory lane, recounting a brief history of transistor evolution to motivate the migration from the planar MOSFET to the fully depleted FinFET. We will summarize the key process technology elements that have enabled the finFET CMOS nodes, highlighting the resulting device technology characteristics and challenges. This will set the context for motivating the introduction of the gate-all-around device architecture, namely nanoribbons or nanosheets, and unveiling the magic of how these devices are fabricated.



  Date and Time

  Location

  Hosts

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  • Date: 14 Apr 2025
  • Time: 11:00 PM UTC to 12:00 AM UTC
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  • 1 Broadway
  • 5th Floor
  • Cambridge, Massachusetts
  • United States 02142
  • Building: Cambridge Innovation Center
  • Room Number: Santa Clara Conference Room, 5th Floor

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  • Starts 12 April 2025 04:00 AM UTC
  • Ends 15 April 2025 01:00 AM UTC
  • No Admission Charge


  Speakers

Alvin of Intel

Topic:

The Road to Gate-All-Around CMOS

Despite the much debated end of Moore's Law, CMOS scaling still maintains economic relevance with 3nm finFET SoCs already in the marketplace for over a year and 2nm gate-all-around SoCs well into risk production. Modest feature size reduction and design/technology innovations co-optimized for primarily logic scaling continue to offer compelling node-to-node power, performance, area, and cost benefits. In this tutorial, we will start with a walk through memory lane, recounting a brief history of transistor evolution to motivate the migration from the planar MOSFET to the fully depleted FinFET. We will summarize the key process technology elements that have enabled the finFET CMOS nodes, highlighting the resulting device technology characteristics and challenges. This will set the context for motivating the introduction of the gate-all-around device architecture, namely nanoribbons or nanosheets, and unveiling the magic of how these devices are fabricated.

Biography:

Alvin Loke is a Senior Principal Engineer at Intel, San Diego, working on analog design/technology co-optimization for Intel’s Angstrom-era CMOS. He has previously worked on CMOS nodes spanning 250nm to 2nm at Agilent, AMD, Qualcomm, TSMC, and NXP. He received a BASc from the University of British Columbia, and MS and PhD from Stanford. After several years in CMOS process integration, Alvin has since worked on analog/mixed-signal design focusing on a variety of wireline links, design/model/technology interface, and analog design methodologies. Alvin has been an active IEEE Solid-State Circuits Society (SSCS) volunteer since 2003, having served as Distinguished Lecturer, AdCom Member, CICC Committee Member, Webinar Chair, Denver and San Diego Chapter Chair, as well as JSSC, SSCL, and Solid-State Circuits Magazine Guest Editor. He currently serves as the VLSI Symposium Secretary and SSCS Global Chapters Chair. Alvin has authored invited publications including the CICC 2018 Best Paper and short courses at ISSCC, VLSI Symposium, CICC, and BCICTS.

Address:San Diego, California, United States





Agenda

6:30 PM  Welcome - Coffee & Snacks

7:00 PM  Introduction and IEEE Boston SSCS and IEEE SSCS Distinguished Lecture Program

7:15 PM   IEEE Boston SSCS Distinguished Lecture Dr. Alvin Loke

8:00 PM  Q&A and Wrap-Up

8:15 PM  Event Concludes