[IEEE TJS Electronics Club] June 6th, 13:00 - Peter Neumann: "AlGaN/GaN-based wide-bandgap piezoelectric semiconductors and their applicability in MEMS"
Welcome to the 2nd meeting of the renewed IEEE TJS Electronics Club! Péter Lajos Neumann from BME-EET will present about AlGaN/GaN-based wide-bandgap piezoelectric semiconductors and their applicability.
Abstract: As a wide bandgap piezoelectric semiconductor, GaN can play an important role in the next generation of micro- and nanoelectromechanical systems (MEMS, NEMS). It is more electrically robust than Si in harsh environments and against ionising radiation, opening up new applications in aerospace. In addition, epitaxial thin films are already commercially available on Si wafers, making it compatible with standard Si MEMS technology. However, in contrast to conventional Si piezoresistive devices, mechanical strain affects the 2-dimensional electron gas (2DEG) density at the AlGaN/GaN interface by changing the magnitude of the polarisation vector discontinuity. Ongoing research into the applicability of this behaviour in MEMS devices leads to force and vibration sensors.
Bio: Peter Lajos Neumann received his BSc in electrical engineering (1999), engineer-teaching (2000) from Óbuda University - Kandó Kálmán Faculty, MSc in electrical engineering (2007) and PhD (2017) from the Technical University of Budapest. He has worked in the industrial field as a development engineer at Nivelco Process Control Co. (2000-2003) and Robert Bosch Ltd (2015-2018). His research activities started at the Research Institute of Technical Physics and Materials Science (MTA-MFA), Hungarian Academy of Sciences, Nanostructures Department (2007-2015), where the main focus was on low-dimensional carbon allotropes (CNT and graphene) research, micro- and nanofabrication and sensor application development. He had a research fellowship at the National Institute for Materials Science (NIMS) (Tsukuba, Ibaraki, JAPAN) (2011-2015), where the research topics were novel quantum device development and biomimetics. He has been working as a senior lecturer at the Department of Electron Devices of the Technical University of Budapest since 2018. and as a researcher at the Energy Research Centre, HUN-REN, Nanosensor Lab since 2021. His main interests are the low-dimensional materials structuring and applications (nanodevices and sensors), the advanced optical systems as photonic crystals, and the MOTT materials research and its application as artificial neuron cell development. He has experience in advanced micro- and nanotechnology processing and characterisation.
You're very welcome to join physically at TalTech room U02-230 and have some coffee & cake! We can continue discussing afterwards :)
Date and Time
Location
Hosts
Registration
- Date: 06 Jun 2025
- Time: 10:00 AM UTC to 12:00 PM UTC
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- Ehitajate tee 5
- Tallinn, Estonia
- Estonia 19086
- Building: U02
- Room Number: U02-230
Speakers
Peter Neumann of Budapest University of Technology and Economics
AlGaN/GaN-based wide-bandgap piezoelectric semiconductors and their applicability
As a wide bandgap piezoelectric semiconductor, GaN can play an important role in the next generation of micro- and nanoelectromechanical systems (MEMS, NEMS). It is more electrically robust than Si in harsh environments and against ionising radiation, opening up new applications in aerospace. In addition, epitaxial thin films are already commercially available on Si wafers, making it compatible with standard Si MEMS technology. However, in contrast to conventional Si piezoresistive devices, mechanical strain affects the 2-dimensional electron gas (2DEG) density at the AlGaN/GaN interface by changing the magnitude of the polarisation vector discontinuity. Ongoing research into the applicability of this behaviour in MEMS devices leads to force and vibration sensors.
Biography:
Peter Lajos Neumann received his BSc in electrical engineering (1999), engineer-teaching (2000) from Óbuda University - Kandó Kálmán Faculty, MSc in electrical engineering (2007) and PhD (2017) from the Technical University of Budapest. He has worked in the industrial field as a development engineer at Nivelco Process Control Co. (2000-2003) and Robert Bosch Ltd (2015-2018). His research activities started at the Research Institute of Technical Physics and Materials Science (MTA-MFA), Hungarian Academy of Sciences, Nanostructures Department (2007-2015), where the main focus was on low-dimensional carbon allotropes (CNT and graphene) research, micro- and nanofabrication and sensor application development. He had a research fellowship at the National Institute for Materials Science (NIMS) (Tsukuba, Ibaraki, JAPAN) (2011-2015), where the research topics were novel quantum device development and biomimetics. He has been working as a senior lecturer at the Department of Electron Devices of the Technical University of Budapest since 2018. and as a researcher at the Energy Research Centre, HUN-REN, Nanosensor Lab since 2021. His main interests are the low-dimensional materials structuring and applications (nanodevices and sensors), the advanced optical systems as photonic crystals, and the MOTT materials research and its application as artificial neuron cell development. He has experience in advanced micro- and nanotechnology processing and characterisation.
Agenda
Club meeting agenda is always the same:
- Invited lecturer presents about their work
- Q&A with lecturer
- Free discussion & networking
Coffee & snacks help create a more inviting atmosphere :)