EDS FET 100 Celebration - Technical Talk on 100 years of Field Effect Transistor: Industrial Face of Nanotechnology
IEEE Electron Device Society (EDS) Delhi Chapter – India & The National Academy of Sciences India-Delhi Chapter
Science Foundation Committee of Deen Dayal Upadhyaya College, University of Delhi
(under the aegis of DBT Star College Status Program and Skill Development Centre@DDUC)
Jointly Organizes
June 18, 2025 at 10:00 am Rensselaer Polytechnic Institute time (GMT - 5) i.e. 08:30 pm India Time (GMT + 5)
100 years of Field Effect Transistor: Industrial Face of Nanotechnology
Michael S. Shur
Electrical, Computer, and Systems Engineering and Physics, Applied Physics, and Astronomy
Rensselaer Polytechnic Institute
Ever since the proposal and demonstration of quantum dots in 1980 by Drs. A. Efros and A. Ekimov (the recipient of the 2023 Nobel Prize), the relentless advancement of nanotechnology has continued unabated. Nowhere is this progress more evident than in Very Large Scale Integrated Circuits (VLSI) and Thin Film Transistor (TFT) technologies. The minimum feature size of silicon VLSI—containing up to four trillion transistors on a single chip—was reduced to 3 nm in 2022, with plans underway for 2 nm technology and beyond. Thin Film Transistors fabricated on glass, and even on cloth or paper, enable integrated circuits with 50 nm tolerances over square-meter-scale areas. These technologies have become disruptive, with applications spanning 5G and Beyond-5G communications, robotics, autonomous vehicles, biotechnology, medicine, security, education, artificial intelligence, defense, and electronic warfare. In this talk, I will discuss the counterintuitive physics of ballistic and plasmonic electron transport in deep submicron device channels. A deeper understanding of this new physics could help mitigate the astronomical costs associated with the design, characterization, and parameter extraction of nanoscale silicon VLSI.
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- Co-sponsored by Deen Dayal Upadhyaya College, University of Delhi, New Delhi 110078
Speakers
Michael S. Shur
100 years of Field Effect Transistor: Industrial Face of Nanotechnology
Ever since the proposal and demonstration of quantum dots in 1980 by Drs. A. Efros and A. Ekimov (the recipient of the 2023 Nobel Prize), the relentless advancement of nanotechnology has continued unabated. Nowhere is this progress more evident than in Very Large Scale Integrated Circuits (VLSI) and Thin Film Transistor (TFT) technologies. The minimum feature size of silicon VLSI—containing up to four trillion transistors on a single chip—was reduced to 3 nm in 2022, with plans underway for 2 nm technology and beyond. Thin Film Transistors fabricated on glass, and even on cloth or paper, enable integrated circuits with 50 nm tolerances over square-meter-scale areas. These technologies have become disruptive, with applications spanning 5G and Beyond-5G communications, robotics, autonomous vehicles, biotechnology, medicine, security, education, artificial intelligence, defense, and electronic warfare. In this talk, I will discuss the counterintuitive physics of ballistic and plasmonic electron transport in deep submicron device channels. A deeper understanding of this new physics could help mitigate the astronomical costs associated with the design, characterization, and parameter extraction of nanoscale silicon VLSI.
Biography:
Michael S. Shur is Patricia and Sheldon Roberts Professor of Solid State Electronics and Professor of Physics, Applied Physics, and Astronomy at Rensselaer Polytechnic Institute and co-founder, President, and CEO of Electronics of the Future, Inc. He was also a co-founder and Vice-President of Sensor Electronics technology, Inc. (a leading producer of deep ultraviolet LEDs) and founder or co-founder of several other startups, including Electronics of the Future, Inc. Dr. Shur is a Life Fellow of IEEE, APS, ECS, and SPIE, Fellow of the National Academy of Inventors, OSA, IET, MRS, WIF, and AAAS. Dr. Shur is a Distinguished Lecturer of IEEE EDS society and Sigma Xi. His awards include St. Petersburg Technical University and University of Vilnius Honorary Doctorates, IEEE EDS Ebers Award, Distinguished Faculty Naval Research Fellowships, William H. Wiley 1866 Distinguished Faculty Award, Rensselaer Outstanding Engineering Professor Award, Institute of Electronic Technology Achievement Medal, ECS Electronic and Photonics Award, Jefferson Science Fellowship, Recognition Award from iNEER, Tibbetts Award for Technology Commercialization, IEEE Sensors Council Technical Achievement Award, IEEE Donald Fink Best Paper Award, IEEE Kirchmayer Award, the Gold Medal of the Russian Education Ministry, van der Ziel Award, Senior Humboldt Award, Pioneer Award, RPI Engineering Research Award, Wiley Award, RPI Outstanding Faculty Award, and several Best Paper Awards. Dr. Shur was listed by the Institute of Scientific Information as a Highly Cited Researcher. His h-index is 116. The Lithuanian Academy of Sciences elected him its Foreign Member.
Address:Electrical, Computer, and Systems Engineering and Physics, Applied Physics, and Astronomy Rensselaer Polytechnic Institute, , Rensselaer Polytechnic Institute, Rhode Island, United States